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CGHV1J070D-GP4

CGHV1J070D-GP4
Mfr. #:
CGHV1J070D-GP4
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGHV1J070D-GP4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGHV1J070D-GP4 more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
15 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V to 2 V
Id - Continuous Drain Current:
4.5 A
Output Power:
45 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
-
Mounting Style:
Screw Mount
Package / Case:
440193
Packaging:
Tray
Application:
-
Configuration:
Single
Height:
4.19 mm
Length:
20.46 mm
Operating Frequency:
2 GHz to 4 GHz
Operating Temperature Range:
-
Product:
GaN HEMT
Width:
5.97 mm
Brand:
Wolfspeed / Cree
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Class:
-
Development Kit:
CGH40035F-TB
Fall Time:
-
NF - Noise Figure:
-
P1dB - Compression Point:
-
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Rise Time:
-
Factory Pack Quantity:
120
Subcategory:
Transistors
Typical Turn-Off Delay Time:
-
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGHV1J, CGHV1, CGHV, CGH
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 40V DIE
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Part # Mfg. Description Stock Price
CGHV1J070D-GP4
DISTI # V36:1790_22799864		Cree, Inc.RF POWER TRANSISTOR0
  • 50000:$84.2700
  • 25000:$84.2800
  • 5000:$86.3200
  • 500:$91.2400
  • 50:$92.1500
CGHV1J070D-GP4
DISTI # CGHV1J070D-ND		WolfspeedRF MOSFET HEMT 40V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray		1019In Stock
  • 10:$75.5800
CGHV1J070D-GP4
DISTI # 941-CGHV1J070D		Cree, Inc.RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt
RoHS: Compliant		170
  • 10:$84.8000
CGHV1J070D-GP4
DISTI # CGHV1J070D-GP4		WolfspeedRF POWER TRANSISTOR
RoHS: Compliant		50
  • 1:$77.2600
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Availability
Stock:
170
On Order:
2153
Enter Quantity:
Current price of CGHV1J070D-GP4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
10
$84.80
$848.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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