IPB60R120P7ATMA1

IPB60R120P7ATMA1
Mfr. #:
IPB60R120P7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPB60R120P7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB60R120P7ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
26 A
Rds On - Drain-Source Resistance:
100 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
36 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
95 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
81 ns
Typical Turn-On Delay Time:
21 ns
Part # Aliases:
IPB60R120P7 SP001664922
Tags
IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPB60R120P7ATMA1
DISTI # V72:2272_18787577
Infineon Technologies AGHIGH POWER_NEW950
  • 500:$2.1410
  • 250:$2.4120
  • 100:$2.5400
  • 25:$2.6320
  • 10:$2.9240
  • 1:$3.7796
IPB60R120P7ATMA1
DISTI # V36:1790_18787577
Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$1.5240
  • 500000:$1.5260
  • 100000:$1.6640
  • 10000:$1.8870
  • 1000:$1.9240
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 5000:$1.7586
  • 2000:$1.8273
  • 1000:$1.9235
IPB60R120P7ATMA1
DISTI # 33092983
Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$1.6389
IPB60R120P7ATMA1
DISTI # 33590324
Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$2.7812
IPB60R120P7ATMA1
DISTI # 32928341
Infineon Technologies AGHIGH POWER_NEW950
  • 4:$3.7796
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1
Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R120P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
IPB60R120P7ATMA1
DISTI # SP001664922
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001664922)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€1.3900
  • 6000:€1.4900
  • 4000:€1.5900
  • 2000:€1.6900
  • 1000:€1.7900
IPB60R120P7ATMA1
DISTI # 49AC7996
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
  • 500:$2.1900
  • 250:$2.4400
  • 100:$2.5800
  • 50:$2.7100
  • 25:$2.8400
  • 10:$2.9700
  • 1:$3.4900
IPB60R120P7ATMA1
DISTI # 726-IPB60R120P7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
17096
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2000:$1.7400
IPB60R120P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$1.7000
IPB60R120P7ATMA1
DISTI # 2841644
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263
RoHS: Compliant
0
  • 1000:$2.6200
  • 500:$2.6700
  • 250:$2.8200
  • 100:$2.9800
  • 10:$3.3700
  • 1:$3.6100
IPB60R120P7ATMA1
DISTI # XSFP00000130966
Infineon Technologies AG 
RoHS: Compliant
2000 in Stock0 on Order
  • 2000:$2.2700
  • 1000:$2.4300
IPB60R120P7ATMA1
DISTI # 2841644
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-2630
  • 500:£1.7000
  • 250:£1.8800
  • 100:£1.9900
  • 10:£2.2900
  • 1:£3.0300
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Gate Drivers HV Gate Driver
IRF7820TRPBF

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OMO.#: OMO-UC2845D8TR

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44769-2402

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Mfr.#: PIC16LF18456-I/SO

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OMO.#: OMO-AD8184ARZ-ANALOG-DEVICES

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Availability
Stock:
17
On Order:
2000
Enter Quantity:
Current price of IPB60R120P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.46
$3.46
10
$2.94
$29.40
100
$2.55
$255.00
250
$2.42
$605.00
500
$2.17
$1 085.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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