DMN10H120SFG-13

Mfr. #:: DMN10H120SFG-13
Manufacturer:: Diodes Incorporated
Description:: MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
Lifecycle:: New from this manufacturer.
Datasheet:: DMN10H120SFG-13 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: DMN10H120SFG-13 Datasheet DMN10H120SFG-13 Datasheet (P4)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerDI3333-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 3.8 A

Rds On - Drain-Source Resistance:: 68 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 10.6 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Series:: D0H120

Transistor Type:: 1 N-Channel

Brand:: Diodes Incorporated

Fall Time:: 2.5 ns

Product Type:: MOSFET

Rise Time:: 1.8 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 11.5 ns

Typical Turn-On Delay Time:: 3.8 ns

Tags: DMN10H120SF, DMN10H12, DMN10H1, DMN10H, DMN10, DMN1, DMN

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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DMN10H120SFG-13 Description

***ure Electronics: DMN10H120SFG Series 100 V 3.8 A N-Channel Enhancement Mode Mosfet -PowerDI3333-8

***roFlash: Trans MOSFET N-CH 100V 3.4A Automotive 8-Pin PowerDI EP T/R

***(Formerly Allied Electronics): MOSFET N-Ch 100V 3.4A POWERDI3333-8

***ure Electronics: DMN10H Series, 100V N-CHANNEL ENHANCEMENT MODE MOSFET - PowerDI3333-8

***ark: Mosfet, N-Ch, 100V, 4.2A, Powerdi 3333 Rohs Compliant: Yes

***des Inc SCT: 100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS

***i-Key: MOSFET N-CH 100V 4.2A PWRDI3333

*** Electronics: MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC

***S: French Electronic Distributor since 1988

***emi: N-Channel PowerTrench® MOSFET 100V, 3.3A, 88mΩ

***ment14 APAC: MOSFET, N-CH, 3.3A, 100V, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Source Voltage Vds:100V; On Resistance

***el Electronic: Embedded - Microcontrollers 3 (168 Hours) 144-LQFP 92 40K x 8 Internal DMA, PWM, WDT Surface Mount Tray 32-Bit IC MCU 32BIT 512KB FLASH 144QFP

***rchild Semiconductor: This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.

***nell: MOSFET, N-CH, 3.3A, 100V, WDFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.4W; Transistor Case Style: WDFN; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***emi: N-Channel PowerTrench® MOSFET, 100V, 3.7A, 120mΩ

***ure Electronics: N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223

***essParts.Net: FAIRCHILD FDT3612 / MOSFET N-CH 100V 3.7A SOT-223 D/C D1025AC

***ical: Trans MOSFET N-CH 100V 3.7A 4-Pin (3+Tab) SOT-223 T/R

***ment14 APAC: MOSFET, N CH, 100V, 3.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.2A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***ure Electronics: N-Channel 80 V 4.6 A 93 mO 3.6 W Surface Mount Power Mosfet - TSOP-6

*** Electronics: In a Pack of 25, N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3

***ark: MOSFET Transistor, N Channel, 4.6 A, 80 V, 0.077 ohm, 10 V

***p One Stop: Trans MOSFET N-CH 80V 3.5A 6-Pin TSOP T/R

***roFlash: Small Signal Field-Effect Transistor, 4.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

***nell: MOSFET, N CH, 80V, 4.6A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power

***ark: MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drai

***ure Electronics: FDN8601 Series 100 V 2.7 A 109 mOhm N-Ch PowerTrench Mosfet - SuperSOT-3

***emi: N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***nell: MOSFET, N CH, 100V, 2.7A, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0854ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; MSL:MSL 1 - Unlimited

***et Europe: Trans MOSFET N-CH 100V 2.8A 6-Pin TSOP T/R

***mal: N-Ch MOSFET TSOP-6 Cu wire 100V 126 mohm @ 10V

***nell: MOSFET, N CH, 100V, 3.8A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Pow

***ure Electronics: MOSFET 100V Vds 20V Vgs TSOP-6

Market price

Part #	Mfg.	Description	Stock	Price
DMN10H120SFG-13 DISTI # DMN10H120SFG-13-ND	Diodes Incorporated	MOSFET N-CH 100V 3.8A POWERDI RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.2592
DMN10H120SFG-13 DISTI # 70550895	Diodes Incorporated	MOSFET N-Ch 100V 3.4A POWERDI3333-8 RoHS: Compliant	0	100:$0.4800 200:$0.3500 500:$0.3100 1000:$0.2800
DMN10H120SFG-13 DISTI # 621-DMN10H120SFG-13	Diodes Incorporated	MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF RoHS: Compliant	5955	1:$0.6100 10:$0.5040 100:$0.3250 1000:$0.2600
DMN10H120SFG-7 DISTI # 621-DMN10H120SFG-7	Diodes Incorporated	MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF RoHS: Compliant	2475	1:$0.6100 10:$0.5040 100:$0.3250 1000:$0.2600
DMN10H120SFG-13 DISTI # 8270529P	Zetex / Diodes Inc	MOSFET N-CH 100V 3.4A POWERDI3333-8, RL	11980	200:£0.3260 400:£0.2890

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of DMN10H120SFG-13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.60~~; ~~$0.60~~

10: ~~$0.50~~; ~~$5.04~~

100: ~~$0.32~~; ~~$32.50~~

1000: ~~$0.26~~; ~~$260.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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