2SC6026MFVGR,L3F

Mfr. #:: 2SC6026MFVGR,L3F
Manufacturer:: Toshiba
Description:: Bipolar Transistors - BJT VESM PLN
Lifecycle:: New from this manufacturer.
Datasheet:: 2SC6026MFVGR,L3F Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2SC6026MFVGR,L3F Datasheet 2SC6026MFVGR,L3F Datasheet (P4)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: SOT-723-3

Transistor Polarity:: NPN

Collector- Emitter Voltage VCEO Max:: 50 V

Collector- Base Voltage VCBO:: 60 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 0.15 V

Maximum DC Collector Current:: 150 mA

Gain Bandwidth Product fT:: 60 MHz

Series:: 2SC6026

DC Current Gain hFE Max:: 400

Height:: 0.5 mm

Length:: 1.2 mm

Packaging:: Reel

Width:: 0.8 mm

Brand:: Toshiba

Continuous Collector Current:: 150 mA

DC Collector/Base Gain hfe Min:: 120

Pd - Power Dissipation:: 150 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 8000

Subcategory:: Transistors

Tags: 2SC6026MFVG, 2SC6026M, 2SC6026, 2SC602, 2SC60, 2SC6, 2SC

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC6026MFVGR,L3F Description

*** Source Electronics: Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM

***enic: 50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS

***: VESM PLN ACTIVE

***ure Electronics: Bipolar Transistors - BJT NPN 50V 150MA

***et: Trans GP BJT NPN 50V 0.15A 3-Pin VMT T/R

***S: French Electronic Distributor since 1988

***el Electronic: Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

***i-Key: TRANS PREBIAS NPN 50V 0.1A VESM

***ure Electronics: Bipolar Transistors - BJT NPN General Purpose Amplification Transistor

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***et: Trans GP BJT NPN 50V 0.1A 3-Pin SOT-723 T/R

***nell: TRANSISTOR, NPN, 50V, 0.1A, SOT-723; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 350MHz; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: 50V 150mA 180MHz 260mW Surface Mount Bipolar (BJT) Transistor SOT-723

***r Electronics: Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans GP BJT NPN 50V 0.15A 260mW Automotive 3-Pin SOT-723 T/R

***p One Stop: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***ark: Transistor; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; Rf Transistor Rohs Compliant: Yes

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: VMT; No. of Pins: 3 Pin; Product Range: DTC114T Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 10mA; DC Collector Current: 10mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: VMT; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***emi: NPN Bipolar Digital Transistor (BRT)

***ical: Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R

***ark: Brt Transistor, 50V, 22K/47Kohm, Sot-723; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
2SC6026MFVGR,L3F DISTI # V72:2272_13897368	Toshiba America Electronic Components	X34 PB-F VESM PLN (LF) TRANSIS	113	100:$0.0535 25:$0.1293 10:$0.1307 1:$0.1995
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGRL3FCT-ND	Toshiba America Electronic Components	TRANS NPN 50V 0.15A VESM RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12391In Stock	2500:$0.0373 1000:$0.0414 500:$0.0608 250:$0.0714 100:$0.1136 25:$0.1460 10:$0.2030 1:$0.2200
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGRL3FDKR-ND	Toshiba America Electronic Components	TRANS NPN 50V 0.15A VESM RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12391In Stock	2500:$0.0373 1000:$0.0414 500:$0.0608 250:$0.0714 100:$0.1136 25:$0.1460 10:$0.2030 1:$0.2200
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGRL3FTR-ND	Toshiba America Electronic Components	TRANS NPN 50V 0.15A VESM RoHS: Compliant Min Qty: 8000 Container: Tape & Reel (TR)	8000In Stock	200000:$0.0210 56000:$0.0236 24000:$0.0252 16000:$0.0268 8000:$0.0315
2SC6026MFVGR,L3F DISTI # 30612547	Toshiba America Electronic Components	X34 PB-F VESM PLN (LF) TRANSIS	7890	1000:$0.0562 500:$0.0572 200:$0.0593 156:$0.0680
2SC6026MFVGR,L3F DISTI # 2SC6026MFVGR,L3F	Toshiba America Electronic Components	Trans GP BJT NPN 50V 0.15A 3-Pin VESM Embossed T/R - Tape and Reel (Alt: 2SC6026MFVGR,L3F) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0	8000:$0.0235 16000:$0.0221 32000:$0.0209 48000:$0.0198 80000:$0.0192
2SC6026MFVGR,L3F DISTI # 757-2SC6026MFVGRL3F	Toshiba America Electronic Components	Bipolar Transistors - BJT VESM PLN RoHS: Compliant	11600	1:$0.2200 10:$0.1390 100:$0.0580 1000:$0.0400 2500:$0.0300 8000:$0.0260 24000:$0.0240 48000:$0.0230 96000:$0.0200
2SC6026MFVGR,L3F DISTI # C1S751201019033	Toshiba America Electronic Components	GP BJT	7890	1000:$0.0441 500:$0.0449 200:$0.0465 100:$0.0533 50:$0.1290
2SC6026MFVGR,L3F	Toshiba America Electronic Components	Bipolar Transistors - BJT VESM PLN RoHS: Compliant	Americas -
2SC6026MFVGRL3F	Toshiba America Electronic Components	Bipolar Transistors - BJT VESM PLN ACTIVE RoHS: Compliant	Americas -

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2SC6026MFVGR,L3F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes