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IPB60R360P7ATMA1

IPB60R360P7ATMA1
Mfr. #:
IPB60R360P7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET TO263-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPB60R360P7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB60R360P7ATMA1 more Information
Product Attribute
Attribute Value
Tags
IPB60R3, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 360 mOhm CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET TO263-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 600V, 9A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.305Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 9A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.305ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:41W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N-CH, 600V, 9A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:9A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.305ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:41W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Part # Mfg. Description Stock Price
IPB60R360P7ATMA1
DISTI # V36:1790_18787580		Infineon Technologies AGLOW POWER_NEW0
    IPB60R360P7ATMA1
    DISTI # V72:2272_18787580    		Infineon Technologies AGLOW POWER_NEW0
      IPB60R360P7ATMA1
      DISTI # IPB60R360P7ATMA1TR-ND      		Infineon Technologies AGMOSFET TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		2000In Stock
      • 10000:$0.7335
      • 5000:$0.7492
      • 2000:$0.7780
      • 1000:$0.8356
      IPB60R360P7ATMA1
      DISTI # IPB60R360P7ATMA1CT-ND      		Infineon Technologies AGMOSFET TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		2000In Stock
      • 500:$1.0388
      • 100:$1.3356
      • 10:$1.6620
      • 1:$1.8400
      IPB60R360P7ATMA1
      DISTI # IPB60R360P7ATMA1DKR-ND      		Infineon Technologies AGMOSFET TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		2000In Stock
      • 500:$1.0388
      • 100:$1.3356
      • 10:$1.6620
      • 1:$1.8400
      IPB60R360P7ATMA1
      DISTI # IPB60R360P7ATMA1      		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPB60R360P7ATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$0.7539
      • 2000:$0.7269
      • 4000:$0.7009
      • 6000:$0.6769
      • 10000:$0.6649
      IPB60R360P7ATMA1
      DISTI # SP001664948      		Infineon Technologies AGLOW POWER_NEW (Alt: SP001664948)
      RoHS: Compliant
      Min Qty: 1000      		Europe - 0
      • 1000:€0.9689
      • 2000:€0.7929
      • 4000:€0.7269
      • 6000:€0.6709
      • 10000:€0.6229
      IPB60R360P7ATMA1
      DISTI # 49AC7999      		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.305ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
      • 500:$0.9170
      • 250:$0.9790
      • 100:$1.0400
      • 50:$1.1300
      • 25:$1.2200
      • 10:$1.3100
      • 1:$1.5400
      IPB60R360P7ATMA1
      DISTI # 726-IPB60R360P7ATMA1      		Infineon Technologies AGMOSFET LOW POWER_NEW
      RoHS: Compliant      		397
      • 1:$1.5400
      • 10:$1.3100
      • 100:$1.0400
      • 500:$0.9170
      • 1000:$0.7600
      • 2000:$0.7080
      • 5000:$0.6820
      • 10000:$0.6550
      IPB60R360P7ATMA1
      DISTI # 2841647      		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-263
      RoHS: Compliant      		0
      • 5000:$1.1700
      • 1000:$1.2400
      • 500:$1.3100
      • 250:$1.5100
      • 100:$1.7900
      • 25:$2.2000
      • 5:$2.5200
      IPB60R360P7ATMA1
      DISTI # 2841647      		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-263
      RoHS: Compliant      		165
      • 500:£0.7210
      • 250:£0.7690
      • 100:£0.8170
      • 25:£1.0300
      • 5:£1.1300
      Image Part # Description
      IPB60R360P7ATMA1

      Mfr.#: IPB60R360P7ATMA1

      OMO.#: OMO-IPB60R360P7ATMA1

      		 MOSFET LOW POWER_NEW
      IPB60R360CFD7ATMA1

      Mfr.#: IPB60R360CFD7ATMA1

      OMO.#: OMO-IPB60R360CFD7ATMA1

      		 MOSFET
      IPB60R360P7ATMA1

      Mfr.#: IPB60R360P7ATMA1

      OMO.#: OMO-IPB60R360P7ATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET TO263-3
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of IPB60R360P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.98
      $0.98
      10
      $0.93
      $9.33
      100
      $0.88
      $88.43
      500
      $0.84
      $417.55
      1000
      $0.79
      $786.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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