RGTH40TS65DGC11

Mfr. #:: RGTH40TS65DGC11
Manufacturer:: ROHM Semiconductor
Description:: IGBT Transistors 650V 20A IGBT Stop Trench
Lifecycle:: New from this manufacturer.
Datasheet:: RGTH40TS65DGC11 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: RGTH40TS65DGC11 more Information

Product Attribute
Attribute Value

Manufacturer:: ROHM Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.6 V

Maximum Gate Emitter Voltage:: 30 V

Continuous Collector Current at 25 C:: 40 A

Pd - Power Dissipation:: 144 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: RGTH40TS65

Packaging:: Tube

Continuous Collector Current Ic Max:: 85 A

Operating Temperature Range:: - 40 C to + 175 C

Brand:: ROHM Semiconductor

Continuous Collector Current:: 20 A

Gate-Emitter Leakage Current:: +/- 200 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 450

Subcategory:: IGBTs

Part # Aliases:: RGTH40TS65D

Unit Weight:: 1.340411 oz

Tags: RGTH40TS, RGTH4, RGTH, RGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RGTH40TS65DGC11 Description

***roFlash: Trans IGBT Chip N-CH 650V 40A 144000mW 3-Pin(3+Tab) TO-247N Bulk

***ure Electronics: 650V 20A TO-247N Field Stop Trench IGBT

***ark: Igbt, Single, 650V, 40A, To-247N-3; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:144W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes

***i-Key: IGBT TRNCH FIELD 650V 40A TO247N

***ical: Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 20 A high speed

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel

***icroelectronics SCT: Short-circuit rugged IGBT, TO-247, Tube

***p One Stop Global: Trans IGBT Chip N-CH 600V 40A 220000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRGP20B60PDPbF Series 600 V 22 A N-Channel UltraFast IGBT - TO-247AC

***ineon SCT: 600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 6 ns Power dissipation: 220 W

***ment14 APAC: IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Device Marking:IRGP20B60PDPbF; Package / Case:TO-247AC; Power Dissipation Max:220W; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

***ical: Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant: Yes

*** Services: CoC and 2-years warranty / RFQ for pricing

***p One Stop Global: Trans IGBT Chip N-CH 600V 34A 100000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***ure Electronics: IRG4PC30SPbF Series 600 V 34 A Flange Mount Standard Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.4 V Current release time: 390 ns Power dissipation: 100 W

***nell: IGBT, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:1.6V; Power Dissipation:100W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:68A; No. of Pins:3; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:590ns; Time, Rise:19ns; Transistors, No. of:1

***ical: Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(3+Tab) TO-247AD Tube

***nell: IGBT, SINGLE, 600V, 32A, TO-247AD-3; DC Collector Current: 32A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o

***ark: Igbt, 600V, 32A, 140W, To-247Ad; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes

***Yang: TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk

*** Electronic Components: IGBT Transistors Sgl N-Ch 600V SMPS

***nell: IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1

RGTH40TS65DGC11 More Information

Field Stop Trench IGBTs: ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.

Market price

Part #	Mfg.	Description	Stock	Price
RGTH40TS65DGC11 DISTI # RGTH40TS65DGC11-ND	ROHM Semiconductor	IGBT 650V 40A 144W TO-247N RoHS: Compliant Min Qty: 1 Container: Tube	Temporarily Out of Stock	2520:$1.2460 510:$1.5575 120:$1.8957 30:$2.2250 10:$2.3590 1:$2.6300
RGTH40TS65DGC11 DISTI # RGTH40TS65DGC11	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-247N Tube (Alt: RGTH40TS65DGC11) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	5000:€1.2075 1000:€1.2420 500:€1.5295 100:€1.6790 25:€2.2425 1:€2.5760
RGTH40TS65DGC11 DISTI # RGTH40TS65DGC11	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH40TS65DGC11) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	2700:$1.0900 4500:$1.0900 1800:$1.1900 900:$1.2900 450:$1.3900
RGTH40TS65DGC11 DISTI # 76Y4973	ROHM Semiconductor	IGBT, SINGLE, 650V, 40A, TO-247N-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:144W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes	400	5000:$1.1600 2500:$1.2000 1000:$1.4800 500:$1.6500 100:$1.7800 10:$2.2200 1:$2.6100
RGTH40TS65DGC11 DISTI # 755-RGTH40TS65DGC11	ROHM Semiconductor	IGBT Transistors 650V 20A IGBT Stop Trench RoHS: Compliant	554	1:$2.6200 10:$2.2300 100:$1.7800 500:$1.5600 1000:$1.3000 2500:$1.2100 5000:$1.1600
RGTH40TS65DGC11 DISTI # 1501475	ROHM Semiconductor	IGBT N-CHANNEL 40A 650V TRENCH TO-247, PK	5	250:£1.3860 50:£1.4660 25:£1.5680 10:£1.7920 5:£2.0380
RGTH40TS65DGC11	ROHM Semiconductor	* FREE SHIPPING ORDERS OVER $100 *	24	22:$3.2200 7:$3.5420 1:$4.8300
RGTH40TS65DGC11 DISTI # 2519792	ROHM Semiconductor	IGBT, SINGLE, 650V, 40A, TO-247N-3 RoHS: Compliant	400	30:$3.3800 10:$3.5900 1:$3.9900
RGTH40TS65DGC11 DISTI # 2519792	ROHM Semiconductor	IGBT, SINGLE, 650V, 40A, TO-247N-3	400	500:£1.3300 250:£1.4100 100:£1.4900 10:£1.5600 1:£2.0800
RGTH40TS65DGC11	ROHM Semiconductor		30	1:¥37.9835 100:¥21.5366 450:¥13.6542
RGTH40TS65DGC11	ROHM Semiconductor	IGBT Transistors 650V 20A IGBT Stop Trench RoHS: Compliant	Americas -
RGTH40TS65DGC11	ROHM Semiconductor	RoHS(ship within 1day)	30	1:$3.1800 10:$2.3900 50:$2.1000 100:$1.8000 500:$1.6700 1000:$1.6100

Image	Part #	Description
	Mfr.#: IKW15N120H3FKSA1 OMO.#: OMO-IKW15N120H3FKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IXYH30N65C3H1 OMO.#: OMO-IXYH30N65C3H1	IGBT Transistors 650V/60A XPT C3 Copacked TO-247
	Mfr.#: IXYH40N65C3H1 OMO.#: OMO-IXYH40N65C3H1	IGBT Transistors 650V/80A XPT Copacked TO-247
	Mfr.#: IXYP10N65C3D1 OMO.#: OMO-IXYP10N65C3D1	IGBT Transistors DISC IGBT XPT-GENX3
	Mfr.#: IXYP10N65C3D1 OMO.#: OMO-IXYP10N65C3D1-IXYS-CORPORATION	IGBT 650V 30A 160W TO-220
	Mfr.#: IKW15N120H3FKSA1 OMO.#: OMO-IKW15N120H3FKSA1-INFINEON-TECHNOLOGIES	IGBT 1200V 30A 217W TO247-3
	Mfr.#: IXYH40N65C3H1 OMO.#: OMO-IXYH40N65C3H1-IXYS-CORPORATION	IGBT Transistors 650V/80A XPT Copacked TO-247
	Mfr.#: IXYH30N65C3H1 OMO.#: OMO-IXYH30N65C3H1-IXYS-CORPORATION	IGBT Transistors 650V/60A XPT C3 Copacked TO-247

RGTH40TS65DGC11

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes