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CSD17570Q5BT

CSD17570Q5BT
Mfr. #:
CSD17570Q5BT
Description:
MOSFET 30V N-Ch Pwr MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD17570Q5BT Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
CSD17570Q5BT more Information CSD17570Q5BT Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-Clip-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
740 uOhms
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
93 nC
Configuration:
Single
Tradename:
NexFET
Packaging:
Reel
Height:
1 mm
Length:
6 mm
Series:
CSD17570Q5B
Transistor Type:
1 N-Channel
Width:
5 mm
Brand:
Texas Instruments
Product Type:
MOSFET
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Unit Weight:
0.004741 oz
Tags
CSD1757, CSD175, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 0.92 mOhm 8-VSON-CLIP -55 to 150
***ical
Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R
***S
French Electronic Distributor since 1988
*** Stop Electro
Power Field-Effect Transistor, 53A I(D), 30V, 0.00092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, 30V, 60A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 60A; 1mohm @ 10V; PowerPAK SO-8
***ure Electronics
Single N-Channel 30 V 4 mOhm SMT TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***nell
MOSFET, N-CH, 30V, 100A, 150DEG C, 104W; Transistor Polarity: N Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 100A; On Resistance Rds(on): 830µohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***roFlash
Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Diss
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
*** Source Electronics
Trans MOSFET N-CH Si 30V 36A 8-Pin PQFN EP T/R / MOSFET N-CH 30V POWER56
***emi
N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
***ment14 APAC
MOSFET,N CH,30V,36A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)
***emi
PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA
***ure Electronics
N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA
*** Source Electronics
MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:30V; On Resistance
***roFlash
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***INS
This 30 V, 0.56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD17570Q5BT
DISTI # C1S746203408886		Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R
RoHS: Compliant		1
  • 1:$2.6900
CSD17570Q5BT
DISTI # 296-48902-1-ND		MOSFET N-CH 30V 100A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		991In Stock
  • 100:$2.1286
  • 10:$2.6490
  • 1:$2.9300
CSD17570Q5BT
DISTI # 296-48902-6-ND		MOSFET N-CH 30V 100A 8VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		991In Stock
  • 100:$2.1286
  • 10:$2.6490
  • 1:$2.9300
CSD17570Q5BT
DISTI # 296-48902-2-ND		MOSFET N-CH 30V 100A 8VSON
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		750In Stock
  • 1250:$1.3318
  • 750:$1.4512
  • 500:$1.6074
  • 250:$1.8370
CSD17570Q5BT
DISTI # CSD17570Q5BT		Trans MOSFET N-CH 30V 100A 8-Pin VSON T/R - Tape and Reel (Alt: CSD17570Q5BT)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$1.2109
  • 1000:$1.1529
  • 1500:$1.1139
  • 2500:$1.0769
  • 5000:$1.0469
CSD17570Q5BT
DISTI # CSD17570Q5BT		Trans MOSFET N-CH 30V 100A 8-Pin VSON T/R (Alt: CSD17570Q5BT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Asia - 0
    CSD17570Q5B
    DISTI # 595-CSD17570Q5B    		MOSFET 30V N-Ch Pwr MOSFET
    RoHS: Compliant    		2515
    • 1:$2.1400
    • 10:$1.8200
    • 100:$1.4600
    • 500:$1.2800
    • 1000:$1.0600
    • 2500:$0.9810
    CSD17570Q5BT
    DISTI # 595-CSD17570Q5BT    		MOSFET 30V N-Ch Pwr MOSFET
    RoHS: Compliant    		2877
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6700
    CSD17570Q5BT
    DISTI # 9083827P    		N-CHANNEL NEXFET MOSFET 30V 53A SON8, RL200
    • 15:£1.5200
    • 30:£1.4680
    • 60:£1.4160
    • 250:£1.2140
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    OMO.#: OMO-TL6330AF200Q-E-SWITCH

    		 SMT MINIATURE IP67 2.80MM X 4.60
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    OMO.#: OMO-DHN-04-V-1190

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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of CSD17570Q5BT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.46
    $2.46
    10
    $2.09
    $20.90
    100
    $1.67
    $167.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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