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AUIRF7303QTR

AUIRF7303QTR
Mfr. #:
AUIRF7303QTR
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
Lifecycle:
New from this manufacturer.
Datasheet:
AUIRF7303QTR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
4.9 A
Rds On - Drain-Source Resistance:
80 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
16.7 nC
Minimum Operating Temperature:
- 55 C
Pd - Power Dissipation:
2 W
Configuration:
Dual
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
2 N-Channel
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
7.7 ns
Product Type:
MOSFET
Rise Time:
21 ns
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
6.8 ns
Part # Aliases:
SP001521078
Unit Weight:
0.019048 oz
Tags
AUIRF730, AUIRF73, AUIRF7, AUIRF, AUIR, AUI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a SO-8 Package
***ical
Trans MOSFET N-CH 30V 5.3A 8-Pin SOIC N Tube
***ied Electronics & Automation
MOSFET Dual N-Ch 30V 5.3A HEXFET SOIC8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, NN CH, 30V, 4.9A, SO8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel:5.3A; Drain Source Voltage Vds, N Channel:30V; Module Configuration:Dual N Channel; On Resistance Rds(on), N Channel:0.05ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
Part # Mfg. Description Stock Price
AUIRF7303QTR
DISTI # AUIRF7303QTR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 5.3A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    AUIRF7303QTR
    DISTI # 942-AUIRF7303QTR    		Infineon Technologies AGMOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
    RoHS: Compliant    		0
      AUIRF7303QTRInfineon Technologies AGPower Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
      RoHS: Compliant      		Europe - 4000
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        Availability
        Stock:
        Available
        On Order:
        5000
        Enter Quantity:
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