IKW25T120FKSA1

Mfr. #:: IKW25T120FKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors LOW LOSS DuoPack 1200V 25A
Lifecycle:: New from this manufacturer.
Datasheet:: IKW25T120FKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1200 V

Collector-Emitter Saturation Voltage:: 1.7 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 50 A

Pd - Power Dissipation:: 190 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Series:: TRENCHSTOP IGBT

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 600 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IKW25T120 IKW25T12XK SP000013939

Unit Weight:: 0.172842 oz

Tags: IKW25T, IKW25, IKW2, IKW

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW25T120FKSA1 Description

*** Source Electronics: Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3

***ure Electronics: IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1

***ource: IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A

***ment14 APAC: IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ark: Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole

***ure Electronics: N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247

***nell: IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins

***et: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 25A, Field Stop Trench

***ark: Fs1Tigbt To247 25A 1200V Rohs Compliant: Yes

***rchild Semiconductor: Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***ical: Trans IGBT Chip N-CH 1200V 50A 326000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***Parts: IGBTs - Single, Transistors N-Channel, PG-TO247-3 50A 1200V 326W Through Hole

***ure Electronics: IKW25N120H3 Series 1200 V 25 A Through Hole TRENCHSTOP IGBT -PG-TO247-3

***ineon SCT: 1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ark: Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:326W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Transistor Mounting:Through Hole; Msl:- Rohs Compliant: Yes |Infineon IKW25N120H3FKSA1.

***nell: IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:326W

***ineon: Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding inverters; Solar inverters; UPS; All hard switching applications

***ical: Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube

*** Electronics: IGBT Transistors 1200V/30A FAST IGBT FSII

***nell: TRANSISTOR, IGBT, 2V, 60A, TO-247-3;

***i-Key: IGBT TRENCH/FS 1200V 60A TO247

*** Stop Electro: Insulated Gate Bipolar Transistor

***ark: Igbt, Single, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:452W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB30N120FL2WG

***omponent: Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)

***ark: Igbt, Single, 1.2Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW20N120R5XKSA1

***ineon SCT: The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS

***ineon: The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies

Market price

Part #	Mfg.	Description	Stock	Price
IKW25T120FKSA1 DISTI # V99:2348_06377412	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	115	500:$4.1240 250:$4.6910 100:$4.7900 50:$5.4890 25:$5.7350 10:$6.0110 1:$7.3018
IKW25T120FKSA1 DISTI # V36:1790_06377412	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	240000:$3.2800 120000:$3.2850 24000:$3.9910 2400:$5.4530 240:$5.7100
IKW25T120FKSA1 DISTI # IKW25T120FKSA1-ND	Infineon Technologies AG	IGBT 1200V 50A 190W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	119In Stock	720:$4.5824 240:$5.2624 25:$6.0604 10:$6.3560 1:$7.0400
IKW25T120FKSA1 DISTI # 29065462	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	115	2:$7.3018
IKW25T120XK DISTI # IKW25T120FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW25T120FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$2.9464 1440:$2.9997 960:$3.1042 480:$3.2206 240:$3.3412
IKW25T120FKSA1 DISTI # 61M6733	Infineon Technologies AG	IGBT, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:190W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	1829	500:$4.4000 250:$4.8300 100:$5.0600 50:$5.4400 25:$5.8300 10:$6.1100 1:$6.7600
IKW25T120 DISTI # 726-IKW25T120	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 1200V 25A RoHS: Compliant	584	1:$6.6900 10:$6.0500 25:$5.7700 100:$5.0100 250:$4.7800 500:$4.3600
IKW25T120FKSA1 DISTI # 726-IKW25T120FKSA1	Infineon Technologies AG	IGBT Transistors LOW LOSS DuoPack 1200V 25A RoHS: Compliant	372	1:$6.6900 10:$6.0500 25:$5.7700 100:$5.0100 250:$4.7800 500:$4.3600
IKW25T120FKSA1 DISTI # 9140220	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1200V 25A TO247, PK	33	300:£3.5830 150:£3.7970 60:£4.0600 15:£4.6370 3:£5.2700
IKW25T120FKSA1 DISTI # 9140220P	Infineon Technologies AG	IGBT TRENCHSTOP NCHANNEL 1200V 25A TO247, TU	87	300:£3.5830 150:£3.7970 60:£4.0600 15:£4.6370
IKW25T120FKSA1 DISTI # IKW25T120	Infineon Technologies AG	1200V 50A 190W TO247 RoHS: Compliant	457	1:€3.9000 10:€2.9000 50:€2.7000 100:€2.6000
IKW25T120FKSA1 DISTI # 1471747	Infineon Technologies AG	IGBT, N, 1200V, 25A, TO-247 RoHS: Compliant	1829	500:$6.5700 250:$7.2000 100:$7.5500 25:$8.7000 10:$9.1200 1:$10.0800
IKW25T120FKSA1 DISTI # 1471747	Infineon Technologies AG	IGBT, N, 1200V, 25A, TO-247	1916	500:£3.4000 250:£3.7100 100:£3.9100 10:£4.4900 1:£5.7100

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IKW25T120FKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes