NGTB15N60R2FG

Mfr. #:: NGTB15N60R2FG
Manufacturer:: ON Semiconductor
Description:: IGBT Transistors RC2 IGBT 15A 600V
Lifecycle:: New from this manufacturer.
Datasheet:: NGTB15N60R2FG Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.85 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 24 A

Pd - Power Dissipation:: 54 W

Maximum Operating Temperature:: + 175 C

Packaging:: Tube

Continuous Collector Current Ic Max:: 14 A

Brand:: ON Semiconductor

Gate-Emitter Leakage Current:: +/- 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 50

Subcategory:: IGBTs

Unit Weight:: 0.211644 oz

Tags: NGTB15N6, NGTB15, NGTB1, NGTB, NGT

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB15N60R2FG Description

***ow.cn: Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube

*** Electronics: ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins

***ark: IGBT, SINGLE, 600V, 24A, TO-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 10 A high speed

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, SINGLE, 600V, 20A, TO-220FP; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi

***ical: Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 15 A high speed

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:

***ical: Trans IGBT Chip N-CH 600V 20A 115000mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 10 A high speed

***ure Electronics: H Series 600 V 20 A Through Hole Silicon IGBT - TO-220-3

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, SINGLE, 600V, 20A, TO-220AB; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 115W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***p One Stop Global: Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.

***et: TO-220, SINGLE, N-CHANNEL, 600V, SMPS II SERIES IGBT

***i-Key: IGBT 600V 28A 125W TO220AB

***ser: IGBTs Sgl, N-Ch, 600V

***el Electronic: IC REG LINEAR POS ADJ HRP7

***i-Key Marketplace: N-CHANNEL IGBT

***el Nordic: Contact for details

***nell: IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Pin Format:GCE; Power, Pd:125W; Power, Ptot:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Rise:4.5ns; Transistors, No. of:1

***i-Key: IGBT 600V 28A 125W TO220AB

***el Electronic: IC REG LINEAR 3V 1.5A TO220FP-3

***nell: IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Fall Typ:50ns; Time, Rise:4.5ns; Transistors, No. of:1

Market price

Part #	Mfg.	Description	Stock	Price
NGTB15N60R2FG DISTI # V99:2348_07317708	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220F Tube RoHS: Compliant	4	5000:$0.8461 2500:$0.8580 1000:$0.9066 500:$1.1068 100:$1.2746 10:$1.5750 1:$2.0505
NGTB15N60R2FG DISTI # V36:1790_07317708	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin(3+Tab) TO-220F Tube RoHS: Compliant	0
NGTB15N60R2FG DISTI # NGTB15N60R2FGOS-ND	ON Semiconductor	IGBT 15A 600V TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	223In Stock	100:$1.4229 50:$1.6700 10:$1.7700 1:$1.9700
NGTB15N60R2FG DISTI # NGTB15N60R2FG	ON Semiconductor	Trans IGBT Chip N-CH 600V 24A 3-Pin TO-220F Tube - Bulk (Alt: NGTB15N60R2FG) Min Qty: 353 Container: Bulk	Americas - 0	3530:$0.8759 1765:$0.8979 1059:$0.9099 706:$0.9219 353:$0.9279
NGTB15N60R2FG DISTI # 45Y1418	ON Semiconductor	IGBT, SINGLE, 600V, 24A, TO-220F-3,DC Collector Current:24A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:54W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0
NGTB15N60R2FG DISTI # 863-NGTB15N60R2FG	ON Semiconductor	IGBT Transistors RC2 IGBT 15A 600V RoHS: Compliant	553	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9230 2500:$0.8590 5000:$0.8280 10000:$0.7960
NGTB15N60R2FG	ON Semiconductor	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant	400	1000:$0.9300 500:$0.9800 100:$1.0200 25:$1.0700 1:$1.1500
NGTB15N60R2FG DISTI # 2492867	ON Semiconductor	IGBT, SINGLE, 600V, 24A, TO-220F-3 RoHS: Compliant	0	5000:$1.2500 2500:$1.2900 1000:$1.3900 500:$1.6900 100:$1.9300 10:$2.4100 1:$2.8300
NGTB15N60R2FG	ON Semiconductor	600V,14A,N-Channel IGBT	107	1:$1.8200 100:$1.3700 500:$1.1700 1000:$1.0900

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NGTB15N60R2FG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes