IRF7831TRPBF

Mfr. #:: IRF7831TRPBF
Manufacturer:: Infineon / IR
Description:: MOSFET MOSFT 30V 21A 3.6mOhm 40nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7831TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF7831TRPBF Datasheet IRF7831TRPBF Datasheet (P4-P6)IRF7831TRPBF Datasheet (P7-P9)IRF7831TRPBF Datasheet (P10)
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More Information:: IRF7831TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 21 A

Rds On - Drain-Source Resistance:: 4.4 mOhms

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 40 nC

Pd - Power Dissipation:: 2.5 W

Configuration:: Single

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Transistor Type:: 1 N-Channel

Width:: 3.9 mm

Brand:: Infineon / IR

Product Type:: MOSFET

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Part # Aliases:: IRF7831TRPBF SP001563658

Unit Weight:: 0.019048 oz

Tags: IRF7831TRP, IRF7831T, IRF7831, IRF783, IRF78, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
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IRF7831TRPBF Description

***ied Electronics & Automation: MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 3.1 Milliohms; ID 21A; SO-8; PD 2.5W; VGS +/-12V

***ark: MOSFET Transistor, N Channel, 21 A, 30 V, 3.6 mohm, 10 V, 2.35 V

***ure Electronics: Single N-Channel 30 V 3.6 mOhm 40 nC HEXFET® Power Mosfet - SOIC-8

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

***ical: Trans MOSFET N-CH 30V 21A 8-Pin SOIC Tube

***p One Stop Japan: Trans MOSFET N-CH 30V 21A 8-Pin SOIC

*** Source Electronics: MOSFET N-CH 30V 21A 8-SOIC

***eco: IC,IRF7831TRPBF,30V SINGLE N-C HANNEL HEXFET PLCC32<NV

***trelec: MOSFET [IR] IRF7831PBF MOSFET

***ukat: N-Ch 30V 21A 2,5W 0,0036R SO8

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***ment14 APAC: Prices include import duty and tax. MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:21A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:170A; Row Pitch:6.3mm; SMD Marking:IRF7831PBF; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N, LOGIC, SO-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0036ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.35V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:21A; Corrente di Impulso Idm:170A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:4.05mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.75mm; Marcatura SMD:IRF7831PBF; No. di Transistor:1; Passo Fila:6.3mm; Profondità Esterna:5.2mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:30V; Tensione Vgs Max:2.35V; Tensione Vgs di Misurazione Rds on:10V

IRF7831TRPBF More Information

30V HEXFET® Power MOSFETs: Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRF7831TRPBF DISTI # V72:2272_13890402	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	749	500:$0.5611 250:$0.6225 100:$0.6294 25:$0.7705 10:$0.7796 1:$0.8826
IRF7831TRPBF DISTI # IRF7831PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3948In Stock	1000:$0.5736 500:$0.7265 100:$0.9369 10:$1.1850 1:$1.3400
IRF7831TRPBF DISTI # IRF7831PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3948In Stock	1000:$0.5736 500:$0.7265 100:$0.9369 10:$1.1850 1:$1.3400
IRF7831TRPBF DISTI # IRF7831PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.5198
IRF7831TRPBF DISTI # 30701816	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	4000	40000:$0.3292 24000:$0.3349 16000:$0.3465 8000:$0.3599 4000:$0.3733
IRF7831TRPBF DISTI # 26648810	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	749	500:$0.5611 250:$0.6225 100:$0.6294 25:$0.7705 19:$0.7796
IRF7831TRPBF DISTI # IRF7831TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3889 8000:$0.3749 16000:$0.3609 24000:$0.3489 40000:$0.3429
IRF7831TRPBF DISTI # IRF7831TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF) RoHS: Not Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.3257 8000:$0.3167 12000:$0.3081 20000:$0.3000 40000:$0.2961 100000:$0.2923 200000:$0.2886
IRF7831TRPBF-1 DISTI # IRF7831TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7831TRPBF-1) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0
IRF7831TRPBF-1 DISTI # IRF7831TRPBF-1	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7831TRPBF-1) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF7831TRPBF DISTI # 33AC5089	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 21A, SOIC,N CHANNEL MOSFET, 30V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:30V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:10V,Threshold RoHS Compliant: Yes	0
IRF7831TRPBF DISTI # 70018969	Infineon Technologies AG	MOSFET,30V,21A,3.6 MOHM,40 NC QG,SO-8 RoHS: Compliant	0	4000:$1.8600 8000:$1.8230 20000:$1.7670 40000:$1.6930 100000:$1.5810
IRF7831TRPBF DISTI # 942-IRF7831TRPBF	Infineon Technologies AG	MOSFET MOSFT 30V 21A 3.6mOhm 40nC RoHS: Compliant	8533	1:$1.1900 10:$1.0100 100:$0.7750 500:$0.6850 1000:$0.5400
IRF7831TRPBF	International Rectifier		1247
IRF7831TRPBF	International Rectifier	RoHS: Compliant	Europe - 3118
IRF7831TRPBF DISTI # 1375010	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 21A, SOIC RoHS: Compliant	0	1:$1.8800 10:$1.6000 100:$1.2300 500:$1.0900 1000:$0.8550 4000:$0.7590
IRF7831TRPBF DISTI # 2947033	Infineon Technologies AG	MOSFET, N-CH, 30V, 21A, 150DEG C, 2.5W RoHS: Compliant	1086	5:£0.8510 25:£0.7650 100:£0.5870 250:£0.5530 500:£0.5180
IRF7831TRPBF DISTI # C1S322000571118	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.4970
IRF7831TRPBF DISTI # C1S322000486430	Infineon Technologies AG	Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant	749	250:$0.6225 100:$0.6294 25:$0.7705 10:$0.7796

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Availability

Stock:: Available
On Order:: 1990
Enter Quantity:

Current price of IRF7831TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.10~~; ~~$1.10~~

10: ~~$0.94~~; ~~$9.45~~

100: ~~$0.73~~; ~~$72.60~~

500: ~~$0.64~~; ~~$321.00~~

1000: ~~$0.51~~; ~~$507.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRF7831TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes