SUM110N10-08

Mfr. #:: SUM110N10-08
Manufacturer:: Vishay Intertechnologies
Description:: Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110N10-08)
Lifecycle:: New from this manufacturer.
Datasheet:: SUM110N10-08 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Tags: SUM110N10-0, SUM110N1, SUM110N, SUM110, SUM11, SUM1, SUM

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SUM110N10-08 Description

***et: Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263

***ark: Mosfet Transistor, N Channel, 160 A, 60 V, 3.3 Mohm, 10 V, 4 V

***ure Electronics: Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***(Formerly Allied Electronics): MOSFET; N Ch.; 60V; 160A; 4.2 MOHM; 85 NC QG; D2-PAK; Pb-Free

***ical: Trans MOSFET N-CH Si 60V 160A 3-Pin(2+Tab) D2PAK Tube

***nell: MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip

***icontronic: Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***eco: Transistor MOSFET N Channel 100 Volt 140 Amp 3-Pin 2+ Tab D2Pak

***ure Electronics: Single N-Channel 100 V 7 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: MOSFET N-CH 100V 130A D2PAK / Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R

***ineon SCT: 100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:100V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:140A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS Power Mosfet - D2PAK-7

***ow.cn: Trans MOSFET N-CH 150V 130A Automotive 7-Pin(6+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance

***roFlash: Power Field-Effect Transistor, 130A I(D), 150V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO263-7, RoHS

***nell: MOSFET, N CH, 150V, 130A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***hard Electronics: VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V

***roFlash: SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263

***ical: Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK

***nell: MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited

***emi: Power MOSFET, N-Channel, QFET®, 100 V, 164 A, 4.7 mΩ, D2PAK

***ure Electronics: N-Channel 100 V 4.7 mohm Surface Mount PowerTrench Mosfet - D2PAK-3

***Yang: Trans MOSFET N-CH 100V 164A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***(Formerly Allied Electronics): NTMFS6B03NT1G N-channel MOSFET Transistor; 132 A; 100 V; 8-Pin SO-8FL

***el Electronic: ON SEMICONDUCTOR NTMFS6B03NT1G MOSFET Transistor, N Channel, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V

***emi: Single N-Channel Power MOSFET 100 V, 132 A, 4.8 mΩ Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel

***nell: N CHANNEL MOSFET, 100V, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 132A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe

Market price

Part #	Mfg.	Description	Stock	Price
SUM110N10-08 DISTI # SUM110N10-08	Vishay Intertechnologies	Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) TO-263 - Rail/Tube (Alt: SUM110N10-08) RoHS: Not Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$3.2900 4800:$3.3900 3200:$3.4900 1600:$3.5900 800:$3.6900

Image	Part #	Description
	Mfr.#: SUM110N06-3M9H-E3 OMO.#: OMO-SUM110N06-3M9H-E3	MOSFET RECOMMENDED ALT 78-SUM50020EL-GE3
	Mfr.#: SUM110N04-05H-E3 OMO.#: OMO-SUM110N04-05H-E3	MOSFET 40V 110A 150W
	Mfr.#: SUM110N04-2M3L-E3 OMO.#: OMO-SUM110N04-2M3L-E3-VISHAY	IGBT Transistors MOSFET 40V 110A 375W 2.3mohm @ 10V
	Mfr.#: SUM110N05-06L-E3 OMO.#: OMO-SUM110N05-06L-E3-VISHAY	MOSFET N-CH 55V 110A D2PAK
	Mfr.#: SUM110N06 OMO.#: OMO-SUM110N06-1190	New and Original
	Mfr.#: SUM110N08-07L OMO.#: OMO-SUM110N08-07L-1190	New and Original
	Mfr.#: SUM110N08-10 OMO.#: OMO-SUM110N08-10-1190	New and Original
	Mfr.#: SUM110P04-04L OMO.#: OMO-SUM110P04-04L-1190	New and Original
	Mfr.#: SUM110P06-07L-E3 OMO.#: OMO-SUM110P06-07L-E3-VISHAY	MOSFET P-CH 60V 110A D2PAK
	Mfr.#: SUM110P06-08L OMO.#: OMO-SUM110P06-08L-1190	New and Original

SUM110N10-08

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes