IPB017N10N5ATMA1

Mfr. #:: IPB017N10N5ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 180A D2PAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB017N10N5ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IPB017N10N5ATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TO-263-7

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 1.7 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 168 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 375 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 132 S

Fall Time:: 27 ns

Product Type:: MOSFET

Rise Time:: 23 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 80 ns

Typical Turn-On Delay Time:: 33 ns

Part # Aliases:: IPB017N10N5 SP001227028

Unit Weight:: 0.056438 oz

Tags: IPB017, IPB01, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB017N10N5ATMA1 Description

***ure Electronics: Single N-Channel 100 V 1.7 mOhm 168 nC OptiMOS Power Mosfet - D2PAK-7

***ical: Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 100V, 180A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB017N10N5ATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

Part #	Mfg.	Description	Stock	Price
IPB017N10N5ATMA1 DISTI # V72:2272_06377445	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R RoHS: Compliant	460	500:$3.8660 250:$4.2610 100:$4.4800 25:$5.1040 10:$5.1110 1:$5.9180
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4797In Stock	500:$4.5011 100:$5.5586 10:$6.7790 1:$7.5900
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4797In Stock	500:$4.5011 100:$5.5586 10:$6.7790 1:$7.5900
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 180A D2PAK-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	4000In Stock	1000:$3.6855
IPB017N10N5ATMA1 DISTI # 31954383	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R RoHS: Compliant	460	2:$5.9180
IPB017N10N5ATMA1 DISTI # IPB017N10N5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB017N10N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.2900 4000:$3.1900 6000:$2.9900 10000:$2.9900
IPB017N10N5ATMA1 DISTI # SP001227028	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: SP001227028) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.0900 2000:€2.9900 4000:€2.9900 6000:€2.7900 10000:€2.6900
IPB017N10N5ATMA1 DISTI # 13AC9022	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	739	500:$4.3800 250:$4.8700 100:$5.1400 50:$5.4000 25:$5.6700 10:$5.9300 1:$6.9700
IPB017N10N5ATMA1 DISTI # 726-IPB017N10N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 100V 180A D2PAK-2 RoHS: Compliant	3414	1:$6.3300 10:$5.3800 100:$4.6600 250:$4.4200 500:$3.9700 1000:$3.3500 2000:$3.1800
IPB017N10N5ATMA1 DISTI # 2725835	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO-263 RoHS: Compliant	1074	500:£3.1000 250:£3.4500 100:£3.6300 10:£4.2000 1:£4.7200
IPB017N10N5ATMA1 DISTI # 2725835	Infineon Technologies AG	MOSFET, N-CH, 100V, 180A, TO-263 RoHS: Compliant	739	500:$7.1300 100:$8.8000 10:$10.7300 1:$12.0200

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Availability

Stock:: Available
On Order:: 1993
Enter Quantity:

Current price of IPB017N10N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.33~~; ~~$6.33~~

10: ~~$5.38~~; ~~$53.80~~

100: ~~$4.66~~; ~~$466.00~~

250: ~~$4.42~~; ~~$1 105.00~~

500: ~~$3.97~~; ~~$1 985.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes