2SK4018(Q)

Mfr. #:: 2SK4018(Q)
Manufacturer:: Toshiba America Electronic Components
Description:
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK4018(Q) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: 2SK401, 2SK40, 2SK4, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK4018(Q) Description

***p One Stop Global: Trans MOSFET N-CH Si 100V 3A 3-Pin(3+Tab) PW-Mold2

***ical: Trans MOSFET N-CH 650V 5.2A 3-Pin(3+Tab) IPAK SL Tube

***ark: Mosfet, N-Ch, 650V, 5.2A, To-251-3; Transistor Polarity:n Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***i-Key: MOSFET N-CH 200V 3.3A TO-220

***ser: MOSFETs 200V N-Channel a-FET Logic Level

***ark: MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.3A; On-Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220; Leaded Process Compatible:Yes RoHS Compliant: Yes

*** Electronics: Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) I2PAK Rail

***ser: MOSFETs 200V N-Channel a-FET Logic Level

***el Electronic: IC REG LINEAR 3.1V 150MA HVSOF5

***ical: Trans MOSFET N-CH 550V 2.4A 3-Pin(2+Tab) DPAK Tube

*** Electronics: COOLMOS N-CHANNEL POWER MOSFET

***(Formerly Allied Electronics): IRF720PBF N-channel MOSFET Transistor; 3.3 A; 400 V; 3-Pin TO-220AB

***ure Electronics: Single N-Channel 400 V 1.8 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 400V 3.3A 3-Pin(3+Tab) TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N Channel Mosfet, 400V, 3.3A To-220; Channel Type:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.3A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No

***ure Electronics: Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 200V 3.3A 3-Pin (3+Tab) TO-220AB

***enic: 200V 3.3A 1.5´Î@10V2A 36W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
2SK4018(Q) DISTI # 30601722	Toshiba America Electronic Components	Trans MOSFET N-CH 100V 3A 3-Pin(3+Tab) PW-Mold2 RoHS: Compliant	1159	800:$0.3034 100:$0.3404 61:$0.3455
2SK4018(Q) DISTI # C1S751200310953	Toshiba America Electronic Components	Trans MOSFET N-CH Si 100V 3A 3-Pin(3+Tab) PW-Mold2 RoHS: Compliant	1159	800:$0.2630 100:$0.2940 50:$0.3000 10:$0.3560

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Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of 2SK4018(Q) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.39~~; ~~$0.39~~

10: ~~$0.37~~; ~~$3.75~~

100: ~~$0.36~~; ~~$35.51~~

500: ~~$0.34~~; ~~$167.65~~

1000: ~~$0.32~~; ~~$315.60~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

2SK401 29
2SK40 245
2SK4 511
2SK 4442

2SK4018(Q)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes