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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| IRFF330 DISTI # IRFF330 | Infineon Technologies AG | Trans MOSFET N-CH 400V 3A 3-Pin TO-39 - Bulk (Alt: IRFF330) RoHS: Not Compliant Min Qty: 10 Container: Bulk | Americas - 230 | |
| IRFF330. DISTI # 27AC6779 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:400V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:25W,No. of Pins:3Pins,MSL:- RoHS Compliant: No RoHS: Not Compliant | 180 |
|
| IRFF330 | International Rectifier | 3 A, 400 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 1 |
|
| IRFF330 DISTI # XSKDRABS0006806 | International Rectifier | RoHS: Compliant | 41 in Stock0 on Order |
|
| Image | Part # | Description |
|---|---|---|
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Mfr.#: IRFF120-5 OMO.#: OMO-IRFF120-5-1190 |
New and Original |
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Mfr.#: IRFF130 OMO.#: OMO-IRFF130-1190 |
Trans MOSFET N-CH 100V 8A 3-Pin TO-39 - Bulk (Alt: IRFF130) |
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Mfr.#: IRFF213 OMO.#: OMO-IRFF213-1190 |
Power Field-Effect Transistor, 1.8A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Mfr.#: IRFF213R OMO.#: OMO-IRFF213R-1190 |
New and Original |
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Mfr.#: IRFF222R OMO.#: OMO-IRFF222R-1190 |
New and Original |
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Mfr.#: IRFF223 OMO.#: OMO-IRFF223-1190 |
Power Field-Effect Transistor, 3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Mfr.#: IRFF311R OMO.#: OMO-IRFF311R-1190 |
New and Original |
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Mfr.#: IRFF433 OMO.#: OMO-IRFF433-1190 |
Power Field-Effect Transistor, 2.25A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Mfr.#: IRFF9111 OMO.#: OMO-IRFF9111-1190 |
New and Original |
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Mfr.#: IRFF9232 OMO.#: OMO-IRFF9232-1190 |
Power Field-Effect Transistor, 3.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |