2SK208-Y(TE85L,F)

Mfr. #:: 2SK208-Y(TE85L,F)
Manufacturer:: Toshiba
Description:: JFET Junction FET N-Ch 0.3 to 6.5mA 10mA
Lifecycle:: New from this manufacturer.
Datasheet:: 2SK208-Y(TE85L,F) Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2SK208-Y(TE85L,F) Datasheet 2SK208-Y(TE85L,F) Datasheet (P4)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Toshiba

Product Category:: JFET

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: SC-59-3

Transistor Polarity:: N-Channel

Configuration:: Single

Vds - Drain-Source Breakdown Voltage:: 10 V

Vgs - Gate-Source Breakdown Voltage:: - 30 V

Drain-Source Current at Vgs=0:: 1.2 mA

Id - Continuous Drain Current:: 6.5 mA

Pd - Power Dissipation:: 100 mW

Series:: 2SK208

Packaging:: Reel

Type:: JFET

Brand:: Toshiba

Gate-Source Cutoff Voltage:: - 5 V

Factory Pack Quantity:: 3000

Unit Weight:: 0.000282 oz

Tags: 2SK208-Y(T, 2SK208-Y, 2SK208, 2SK20, 2SK2, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK208-Y(TE85L,F) Description

***nsix Microsemi: Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET

***p One Stop: Trans JFET N-CH 3mA Si 3-Pin S-Mini T/R

*** Americas: FET JFET (3MA 50V (VGDS) N-CH

***i-Key: JFET N-CH 50V 6.5MA SMINI

***el Electronic: MOSFET N-CH 50V S-MINI

***S: new, original packaged

***enic: SC-59 JFETs ROHS

***(Formerly Allied Electronics): SI2304DDS-T1-GE3 N-channel MOSFET Transistor; 3.6 A; 30 V; 3-Pin TO-236

***ure Electronics: Single N-Channel 30 V 0.06 Ohm Surface Mount Power MosFet - SOT-23-3

***sible Micro: Transistor, MOSFET, N-ch, 30V(d-s), 3.3A, SOT23-3, SMD

***enic: 30V 3.3A 60m´Î@10V3.2A 1.1W 2.2V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ark: N CHANNEL MOSFET, 30V, 3.6A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: No

***ment14 APAC: MOSFET,N CH,30V,3.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.3A; Power Dissipation Pd:1.1W; Voltage Vgs Max:20V

***ure Electronics: DMP2160U Series 20 V 80 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET P-CH 20V 3.3A Automotive 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): MOSFET P-Channel 20V 3.3A SOT23 | Diodes Inc DMP2160U-7

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.4 W

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -600mV;

***hard Electronics: Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23

*** Source Electronics: MOSFET P-CH 20V 600MA SOT23-3 / Trans MOSFET P-CH 20V 0.6A 3-Pin SOT-23 T/R

***ure Electronics: P-Channel 20 V 0.9 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3

***ment14 APAC: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-600mA; Source Voltage Vds:-20V; On Resistance

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -600mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.7ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 550mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3

***enic: 30V 5A 1.7W 42m´Î@10V3.8A 2.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ark: MOSFET, P-CH, -30V, -5A, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes

***roFlash: Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P-CH, -30V, -5A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***ure Electronics: Single N-Channel 20 V 45 mOhm 7 nC 0.8 W Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): MOSFET N-Channel 20V 4.2A SOT23 | Diodes Inc DMN2075U-7

***nell: MOSFET, N-CH, 20V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Si2374DS Series 20 V 0.030 Ohm SMT N-Channel MOSFET - SOT-23 (TO-236)

***ment14 APAC: MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Source Voltage Vds:20V; On Resistance

***roFlash: Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CH, 20V, 5.9A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Market price

Part #	Mfg.	Description	Stock	Price
2SK208-Y(TE85L,F) DISTI # C1S751200943690	Toshiba America Electronic Components	Trans JFET N-CH 3mA Si 3-Pin S-Mini T/R RoHS: Compliant	4600	1000:$0.5340 500:$0.5750 100:$0.6060
2SK208-Y(TE85L,F) DISTI # 2SK208-Y(TE85LF)CT-ND	Toshiba America Electronic Components	MOSFET N-CH 50V S-MINI RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
2SK208-Y(TE85L,F) DISTI # 2SK208-Y(TE85LF)DKR-ND	Toshiba America Electronic Components	MOSFET N-CH 50V S-MINI RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
2SK208-Y(TE85L,F) DISTI # 2SK208-Y(TE85LF)TR-ND	Toshiba America Electronic Components	MOSFET N-CH 50V S-MINI RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
2SK208-Y(TE85L,F) DISTI # 757-2SK208-YTE85LF	Toshiba America Electronic Components	JFET Junction FET N-Ch 0.3 to 6.5mA 10mA RoHS: Compliant	5635	1:$0.5400 10:$0.3590 100:$0.2010 1000:$0.1460 3000:$0.1260 9000:$0.1180 24000:$0.1080 45000:$0.1040
2SK208-Y(TE85L,F)	Toshiba America Electronic Components		3354

Image	Part #	Description
	Mfr.#: BC847CDXV6T1G OMO.#: OMO-BC847CDXV6T1G	Bipolar Transistors - BJT 100mA 50V Dual NPN
	Mfr.#: NSVJ3557SA3T1G OMO.#: OMO-NSVJ3557SA3T1G	JFET NCH J-FET
	Mfr.#: MMBFJ202 OMO.#: OMO-MMBFJ202	JFET N-Channel Transistor General Purpose
	Mfr.#: J113 OMO.#: OMO-J113	JFET N-Channel Switch
	Mfr.#: CD4013BE OMO.#: OMO-CD4013BE	Flip Flops Dual CMOS
	Mfr.#: CD74AC174E OMO.#: OMO-CD74AC174E	Flip Flops Hex w/ Reset
	Mfr.#: CD40106BE OMO.#: OMO-CD40106BE	Inverters Hex Schmitt Trigger
	Mfr.#: TCA9548APWR OMO.#: OMO-TCA9548APWR	Switch ICs - Various 8-Channel I2C Switch
	Mfr.#: 292304-1 OMO.#: OMO-292304-1	USB Connectors 4P 'B' RECEPTACLE
	Mfr.#: J113 OMO.#: OMO-J113-ON-SEMICONDUCTOR	JFET N-Channel Switch

2SK208-Y(TE85L,F)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes