CSD17505Q5A

CSD17505Q5A
Mfr. #:
CSD17505Q5A
Description:
MOSFET 30V,NCh NexFET Power MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
CSD17505Q5A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CSD17505Q5A more Information CSD17505Q5A Product Details
Product Attribute
Attribute Value
Manufacturer:
Texas Instruments
Product Category:
MOSFET
RoHS:
E
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSONP-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
4.6 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
10 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.2 W
Configuration:
Single
Tradename:
NexFET
Packaging:
Reel
Height:
1 mm
Length:
6 mm
Series:
CSD17505Q5A
Transistor Type:
1 N-Channel
Type:
Power MOSFET
Width:
4.9 mm
Brand:
Texas Instruments
Fall Time:
6.1 ns
Product Type:
MOSFET
Rise Time:
11.5 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Unit Weight:
0.011640 oz
Tags
CSD1750, CSD175, CSD17, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***s
    S***s
    RU

    Shipping long, track not tracked, everything works checked can be taken

    2019-04-20
    B***v
    B***v
    RU

    Very warm, if more than 10 seconds will stand then 100% all will burn, shorter poop this, does not correspond to reality!

    2019-05-14
***as Instruments
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm 8-VSONP -55 to 150
***ical
Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
***ark
N CHANNEL, POWER MOSFET, 30V, 100A, SON-8
***el Electronic
MOSFET 30V,NCh NexFET Power MOSFET
***i-Key
MOSFET N-CH 30V 24A/100A 8VSON
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET, N CH, 30V,24A,8SON; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2900µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:3.2W; Voltage Vgs Max:1.3V
***OMO Electronic
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
CSD17505Q5A 30V, NexFET™ Power MOSFET
OMO Electronic CSD17505Q5A 30V, N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. TI CSD17505Q5A N-Channel NexFET Power MOSFET features ultralow gate charge total (4.5V) of 10nC (typical) and ultralow gate charge gate to drain of 2.7nC (typical). TI CSD17505Q5A NexFET Power MOSFET offers low thermal resistance and are optimized for control and synchronous FET applications. They are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems. Learn More
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Part # Description Stock Price
CSD17505Q5A
DISTI # 296-28082-1-ND
MOSFET N-CH 30V 100A 8SON
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)
269In Stock
  • 1000:$0.8789
  • 500:$1.0608
  • 100:$1.3638
  • 10:$1.6970
  • 1:$1.8800
CSD17505Q5A
DISTI # 296-28082-6-ND
MOSFET N-CH 30V 100A 8SON
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®
269In Stock
  • 1000:$0.8789
  • 500:$1.0608
  • 100:$1.3638
  • 10:$1.6970
  • 1:$1.8800
CSD17505Q5A
DISTI # 296-28082-2-ND
MOSFET N-CH 30V 100A 8SON
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 5000:$0.7651
  • 2500:$0.7945
CSD17505Q5A
DISTI # CSD17505Q5A
Trans MOSFET N-CH 30V 24A 8-Pin SON T/R - Tape and Reel (Alt: CSD17505Q5A)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.7759
  • 5000:$0.7379
  • 10000:$0.7139
  • 15000:$0.6899
  • 25000:$0.6709
CSD17505Q5A
DISTI # CSD17505Q5A
Trans MOSFET N-CH 30V 24A 8-Pin SON T/R (Alt: CSD17505Q5A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€1.0749
  • 5000:€0.8789
  • 10000:€0.8059
  • 15000:€0.6909
  • 25000:€0.6449
CSD17505Q5A30V, N-Channel NexFET&#153,Power MOSFET with 20 Volt Vgs5000
  • 1000:$0.6100
  • 750:$0.6800
  • 500:$0.8500
  • 250:$1.0400
  • 100:$1.1300
  • 25:$1.3200
  • 10:$1.4300
  • 1:$1.6000
CSD17505Q5A
DISTI # 595-CSD17505Q5A
MOSFET 30V,NCh NexFET Power MOSFET
RoHS: Compliant
220
  • 1:$1.5800
  • 10:$1.3400
  • 100:$1.0700
  • 500:$0.9370
  • 1000:$0.7760
  • 2500:$0.7230
CSD17505Q5APower Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
RoHS: Compliant
7781
  • 1000:$0.6600
  • 500:$0.7000
  • 100:$0.7300
  • 25:$0.7600
  • 1:$0.8100
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MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 4.2mOhm 8-VSONP -55 to 150
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of CSD17505Q5A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.58
$1.58
10
$1.34
$13.40
100
$1.07
$107.00
500
$0.94
$468.50
1000
$0.78
$776.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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