FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1
Mfr. #:
FF600R12ME4EB11BOSA1
Manufacturer:
Infineon Technologies
Description:
IGBT Modules
Lifecycle:
New from this manufacturer.
Datasheet:
FF600R12ME4EB11BOSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FF600R12ME4EB11BOSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Modules
RoHS:
Y
Product:
IGBT Silicon Modules
Configuration:
Common Emitter
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.75 V
Continuous Collector Current at 25 C:
600 A
Gate-Emitter Leakage Current:
400 nA
Pd - Power Dissipation:
20 mW
Package / Case:
152 mm x 62.5 mm x 20.5 mm
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Packaging:
Tray
Brand:
Infineon Technologies
Mounting Style:
Press Fit
Maximum Gate Emitter Voltage:
15 V
Product Type:
IGBT Modules
Factory Pack Quantity:
6
Subcategory:
IGBTs
Part # Aliases:
SP001671626
Tags
FF600R12ME4, FF600R12M, FF600R12, FF600R1, FF600, FF60, FF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
EconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray
***ark
Igbt Mod, Dual N-Ch, 1.2Kv, 600A; Transistor Polarity:dual N Channel; Dc Collector Current:600A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Summary of Features: EconoDUAL 3 with Common Emitter topology; Low VCEsat; Tvj op = 150C; VISO = 3.4kVrms 1 min ( 4.8kV DC 1 min); Standard Housing; PressFIT control pins and screw power terminals; Compact and robust design with molded terminals | Benefits: 3-level NPC2 configuration based on established EconoDUAL 3 housing; In line with UL requirements for 1500V solar inverters; Compact modules; Easy and most reliable assembly; No plugs and cables required | Target Applications: solar; ups; drives
Infineon EconoDUAL™ 3 with Common Emitter
Infineon EconoDUAL™ 3 with Common Emitter are suited for 1500V and 1000V solar inverters, and are dedicated modules for 3-level NPC2 topologies. The EconoDUAL™ 3 is widely used in 1000V systems for solar applications and provides a new solution for relying on the established EconoDUAL™ 3 housing in future designs. Two new EconoDUAL™ 3 modules with Common Emitter configuration are available, the FF450R12ME4E_B11 and FF600R12ME4E_B11. Both are equipped with the proven PressFIT housing, enabling for fast and cost efficient assembly in the production line.
Part # Mfg. Description Stock Price
FF600R12ME4EB11BOSA1
DISTI # V99:2348_18787569
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1-ND
Infineon Technologies AGMOD IGBT MED PWR ECONOD-5
RoHS: Compliant
Min Qty: 1
Container: Tray
6In Stock
  • 12:$232.6908
  • 1:$242.9600
FF600R12ME4EB11BOSA1
DISTI # 31575567
Infineon Technologies AGMEDIUM POWER ECONO6
  • 25:$218.9385
  • 10:$222.0570
  • 6:$227.7000
FF600R12ME4EB11BOSA1
DISTI # 30304246
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray - Trays (Alt: FF600R12ME4EB11BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 0
  • 60:$206.0900
  • 36:$211.1900
  • 24:$216.4900
  • 12:$222.1900
  • 6:$225.0900
FF600R12ME4EB11BOSA1
DISTI # SP001671626
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray (Alt: SP001671626)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1000:€204.7900
  • 500:€207.6900
  • 100:€210.0900
  • 50:€213.7900
  • 25:€225.0900
  • 10:€227.4900
  • 1:€234.4900
FF600R12ME4EB11BOSA1
DISTI # 93AC7011
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A,Transistor Polarity:Dual N Channel,DC Collector Current:600A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes3
  • 25:$235.1200
  • 10:$238.4600
  • 5:$244.5300
  • 1:$250.5600
FF600R12ME4EB11BOSA1
DISTI # 726-FF600R12ME4EB11
Infineon Technologies AGIGBT Modules
RoHS: Compliant
8
  • 1:$248.0800
  • 5:$242.1100
  • 10:$236.1000
  • 25:$232.7900
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A
RoHS: Compliant
3
  • 1:$349.4200
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A3
  • 5:£169.0000
  • 1:£180.0000
Image Part # Description
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4

IGBT Modules
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4-1190

Trans IGBT Module N-CH 1.2KV 150A 43-Pin (Alt: FP150R12KT4)
Availability
Stock:
14
On Order:
1997
Enter Quantity:
Current price of FF600R12ME4EB11BOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$248.08
$248.08
5
$242.11
$1 210.55
10
$236.10
$2 361.00
25
$232.79
$5 819.75
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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