2N6729

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

80 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

1 A

Gain Bandwidth Product fT:

500 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

2N6729

DC Current Gain hFE Max:

80 at 50 mA, 1 V

Height:

4.01 mm

Length:

4.77 mm

Width:

2.41 mm

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

80

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

2N672, 2N67, 2N6