TH58NYG3S0HBAI4

TH58NYG3S0HBAI4
Mfr. #:
TH58NYG3S0HBAI4
Manufacturer:
Toshiba Memory
Description:
NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
Lifecycle:
New from this manufacturer.
Datasheet:
TH58NYG3S0HBAI4 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
NAND Flash
RoHS:
Y
Mounting Style:
SMD/SMT
Package / Case:
TFBGA-63
Memory Size:
8 Gbit
Interface Type:
Parallel
Organization:
1 G x 8
Timing Type:
Synchronous
Data Bus Width:
8 bit
Supply Voltage - Min:
1.7 V
Supply Voltage - Max:
1.95 V
Supply Current - Max:
30 mA
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Packaging:
Tray
Memory Type:
NAND
Brand:
Toshiba Memory
Moisture Sensitive:
Yes
Product Type:
NAND Flash
Factory Pack Quantity:
210
Subcategory:
Memory & Data Storage
Tags
TH58NYG3, TH58NY, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V
***i-Key
8GB SLC NAND 24NM BGA 9X11 3.3V
Part # Mfg. Description Stock Price
TH58NYG3S0HBAI4
DISTI # V36:1790_21592784
Toshiba America Electronic ComponentsNAND Flash Parallel 1.8V 8G-bit 1G x 8 63-Pin FBGA0
    TH58NYG3S0HBAI4
    DISTI # TH58NYG3S0HBAI4-ND
    Toshiba Semiconductor and Storage Products8GB SLC NAND 24NM BGA 9X11 3.3V
    RoHS: Compliant
    Min Qty: 1
    Container: Tray
    210In Stock
    • 1050:$6.1661
    • 630:$6.3899
    • 420:$6.7188
    • 210:$6.9289
    • 50:$7.7236
    • 25:$7.7512
    • 10:$7.9150
    • 1:$8.6000
    TH58NYG3S0HBAI4
    DISTI # TH58NYG3S0HBAI4
    Toshiba America Electronic Components8G(4G x 2)bit, generation: 24nm, VCC=1.7 to 1.95V - Trays (Alt: TH58NYG3S0HBAI4)
    RoHS: Compliant
    Min Qty: 210
    Container: Tray
    Americas - 0
    • 2100:$5.1900
    • 1260:$5.2900
    • 840:$5.4900
    • 420:$5.5900
    • 210:$5.6900
    TH58NYG3S0HBAI4
    DISTI # 757-TH58NYG3S0HBAI4
    Toshiba America Electronic ComponentsNAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
    RoHS: Compliant
    193
    • 1:$8.6000
    • 10:$7.9200
    • 25:$7.7500
    • 50:$7.7200
    • 100:$6.9300
    • 250:$6.7200
    • 500:$6.3900
    • 1000:$6.1700
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    Availability
    Stock:
    193
    On Order:
    2176
    Enter Quantity:
    Current price of TH58NYG3S0HBAI4 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $8.60
    $8.60
    10
    $7.92
    $79.20
    25
    $7.75
    $193.75
    50
    $7.72
    $386.00
    100
    $6.93
    $693.00
    250
    $6.72
    $1 680.00
    500
    $6.39
    $3 195.00
    1000
    $6.17
    $6 170.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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