AUIRFS4010TRL

Mfr. #:: AUIRFS4010TRL
Manufacturer:: Infineon / IR
Description:: MOSFET 100V 170A 4.7 mOhm Automotive MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: AUIRFS4010TRL Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 180 A

Rds On - Drain-Source Resistance:: 4.7 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 143 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 375 W

Configuration:: Single

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 189 S

Fall Time:: 77 ns

Product Type:: MOSFET

Rise Time:: 86 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 100 ns

Typical Turn-On Delay Time:: 21 ns

Part # Aliases:: SP001520712

Unit Weight:: 0.139332 oz

Tags: AUIRFS4010TRL, AUIRFS4010T, AUIRFS40, AUIRFS4, AUIRFS, AUIRF, AUIR, AUI

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

AUIRFS4010TRL Description

***(Formerly Allied Electronics): AUIRFS4010 N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK

***ical: Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube

***ernational Rectifier: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package

***ment14 APAC: MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***-Tronics LLC (USA): Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK

***ment14 APAC: MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance

***roFlash: Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R

***ark: N CH POWER MOSFET, HEXFET, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube

***C: MOSFET N-CH 100V 180A D2PAK MOSFET N-CH 100V 180A D2PAK

***(Formerly Allied Electronics): MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK

***ark: HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:180A; On Resistance, Rds(on):3.9mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-D2PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ure Electronics: FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3

***Yang: Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

***ment14 APAC: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics: N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R

***ponent Stockers USA: 180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET

***ark: MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 180A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ow.cn: STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com

***icroelectronics SCT: Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel

***ineon SCT: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:370W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Exhaust

***(Formerly Allied Electronics): IRFS7734PBF N-channel MOSFET Transistor; 183 A; 75 V; 3-Pin D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***roFlash: Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET¬Æ Power Mosfet - D2PAK

***ark: TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK

***nell: MOSFET, N-CH, 75V, 183A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W

*** Stop Electro: Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***ical: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R

***emi: Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel

***r Electronics: Power Field-Effect Transistor, 100A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***icroelectronics: N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

***ure Electronics: N-Channel 100 V 2.3 mOhm STripFET VII DeepGATE Power Mosfet-H2PAK-2

***ark: MOSFET, N-CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
AUIRFS4010TRL DISTI # AUIRFS4010TRL	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS4010TRL) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$2.4900 1600:$2.3900 3200:$2.2900 4800:$2.1900 8000:$2.1900
AUIRFS4010TRL DISTI # 942-AUIRFS4010TRL	Infineon Technologies AG	MOSFET 100V 170A 4.7 mOhm Automotive MOSFET RoHS: Compliant	469	1:$4.6800 10:$3.9800 100:$3.4500 250:$3.2700 500:$2.9400 800:$2.4800 2400:$2.3500

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AUIRFS4010TRL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes