MRFE6VP8600HSR5

Mfr. #:: MRFE6VP8600HSR5
Manufacturer:: NXP / Freescale
Description:: RF MOSFET Transistors VHV6 600W NI1230S 50V
Lifecycle:: New from this manufacturer.
Datasheet:: MRFE6VP8600HSR5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Vds - Drain-Source Breakdown Voltage:: 140 V

Gain:: 18.8 dB

Output Power:: 600 W

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-1230S

Packaging:: Reel

Configuration:: Dual

Operating Frequency:: 470 MHz to 860 MHz

Series:: MRFE6VP8600H

Type:: RF Power MOSFET

Brand:: NXP / Freescale

Forward Transconductance - Min:: 15.6 S

Pd - Power Dissipation:: 1.52 kW

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 10 V

Vgs th - Gate-Source Threshold Voltage:: 2.07 V

Part # Aliases:: 935310858178

Unit Weight:: 0.467870 oz

Tags: MRFE6VP8, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6VP8600HSR5 Description

***W: RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1829

***ical: Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R

***ark: Rf Fet, 130V, 1.052Kw, Ni-1230S Rohs Compliant: Yes

*** Electronic Components: RF MOSFET Transistors VHV6 600W NI1230S 50V

***el Electronic: LED DRVR 3Segment 3.3V/5V 14-Pin TSSOP T/R

***i-Key: FET RF 2CH 130V 860MHZ NI1230S

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

*** Stop Electro: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: RF FET, 1.8MHZ-600MHZ, NI-780S; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.05kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-780S; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ark: Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes

***W: RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

***-Wing Technology: Tape & Reel (TR) N-CHANNEL EAR99 MRFE6VP61K25 RF Mosfet 100mA 1250W 24dB 230MHz

***ure Electronics: MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230

***nell: TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS

***ark: RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

Market price

Part #	Mfg.	Description	Stock	Price
MRFE6VP8600HSR5 DISTI # 25967845	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R	309	1:$252.0000
MRFE6VP8600HSR5 DISTI # MRFE6VP8600HSR5TR-ND	NXP Semiconductors	FET RF 2CH 130V 860MHZ NI1230S RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Temporarily Out of Stock	50:$253.8838
MRFE6VP8600HSR5 DISTI # MRFE6VP8600HSR5	Avnet, Inc.	VHV6 600W 50V NI1230S - Tape and Reel (Alt: MRFE6VP8600HSR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$278.1900 100:$267.2900 200:$256.8900 300:$247.4900 500:$242.7900
MRFE6VP8600HSR5 DISTI # 841-MRFE6VP8600HSR5	NXP Semiconductors	RF MOSFET Transistors VHV6 600W NI1230S 50V RoHS: Compliant	36	1:$279.2100 5:$272.9800 10:$267.3900 25:$263.4500 50:$253.8800
MRFE6VP8600HSR5 DISTI # MRFE6VP8600HSR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	22	1:$263.1200 10:$256.1900 25:$252.8700

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Availability

Stock:: 17
On Order:: 2000
Enter Quantity:

Current price of MRFE6VP8600HSR5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$279.21~~; ~~$279.21~~

5: ~~$272.98~~; ~~$1 364.90~~

10: ~~$267.39~~; ~~$2 673.90~~

25: ~~$263.45~~; ~~$6 586.25~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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MRFE6VP8600HSR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes