NSS40300DDR2G

Mfr. #:: NSS40300DDR2G
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP
Lifecycle:: New from this manufacturer.
Datasheet:: NSS40300DDR2G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NSS40300DDR2G Datasheet NSS40300DDR2G Datasheet (P4-P6)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: SMD/SMT

Package / Case:: SOIC-Narrow-8

Transistor Polarity:: PNP

Configuration:: Dual

Collector- Emitter Voltage VCEO Max:: - 40 V

Collector- Base Voltage VCBO:: - 40 V

Emitter- Base Voltage VEBO:: - 7 V

Collector-Emitter Saturation Voltage:: 0.135 V

Maximum DC Collector Current:: - 6 A

Gain Bandwidth Product fT:: 100 MHz

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: NSS40300DD

DC Current Gain hFE Max:: 250 at 10 mA, 2 V

Height:: 1.5 mm

Length:: 5 mm

Packaging:: Reel

Width:: 4 mm

Brand:: ON Semiconductor

Continuous Collector Current:: - 3 A

DC Collector/Base Gain hfe Min:: 250

Pd - Power Dissipation:: 783 mW

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 2500

Subcategory:: Transistors

Unit Weight:: 0.005044 oz

Tags: NSS40300, NSS403, NSS40, NSS4, NSS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NSS40300DDR2G Description

***et Europe: Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R

***th Star Micro: ON Semiconductors e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Market price

Part #	Mfg.	Description	Stock	Price
NSS40300DDR2G DISTI # NSS40300DDR2GOSCT-ND	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2445In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
NSS40300DDR2G DISTI # NSS40300DDR2GOSDKR-ND	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2445In Stock	1000:$0.3288 500:$0.4110 100:$0.5199 10:$0.6780 1:$0.7700
NSS40300DDR2G DISTI # NSS40300DDR2GOSTR-ND	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.2660 5000:$0.2693 2500:$0.2893
NSS40300DDR2G DISTI # NSS40300DDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R (Alt: NSS40300DDR2G) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2399 15000:€0.2589 10000:€0.2799 5000:€0.3059 2500:€0.3739
NSS40300DDR2G DISTI # NSS40300DDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Bulk (Alt: NSS40300DDR2G) RoHS: Compliant Min Qty: 1191 Container: Bulk	Americas - 0	11910:$0.2589 5955:$0.2649 3573:$0.2689 2382:$0.2719 1191:$0.2739
NSS40300DDR2G DISTI # NSS40300DDR2G	ON Semiconductor	Trans GP BJT NPN/PNP 40V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: NSS40300DDR2G) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2339 15000:$0.2399 10000:$0.2429 5000:$0.2459 2500:$0.2479
NSS40300DDR2G DISTI # 863-NSS40300DDR2G	ON Semiconductor	Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP RoHS: Compliant	5043	1:$0.7100 10:$0.5890 100:$0.3800 1000:$0.3040 2500:$0.2570 10000:$0.2480 25000:$0.2380
NSS40300DDR2G	ON Semiconductor	Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon RoHS: Compliant	54821	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400
NSS40300DDR2G	ON Semiconductor		449
NSS40300DDR2G	ON Semiconductor	Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor	398	1:$0.4400 100:$0.3400 500:$0.3100 1000:$0.2900

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Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of NSS40300DDR2G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.71~~; ~~$0.71~~

10: ~~$0.59~~; ~~$5.89~~

100: ~~$0.38~~; ~~$38.00~~

1000: ~~$0.30~~; ~~$304.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

NSS40300 9
NSS403 18
NSS40 37
NSS4 43
NSS 404

NSS40300DDR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes