IPG16N10S461ATMA1

IPG16N10S461ATMA1
Mfr. #:
IPG16N10S461ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IPG16N10S461ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPG16N10S461ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
16 A
Rds On - Drain-Source Resistance:
53 mOhms, 53 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
7 nC, 7 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
29 W
Configuration:
Dual
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
IPG16N10
Transistor Type:
2 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Fall Time:
5 ns, 5 ns
Product Type:
MOSFET
Rise Time:
1 ns, 1 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
5 ns, 5 ns
Typical Turn-On Delay Time:
3 ns, 3 ns
Part # Aliases:
IPG16N10S4-61 IPG16N1S461XT SP000892972
Unit Weight:
0.003383 oz
Tags
IPG16, IPG1, IPG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
***et Europe
Trans MOSFET N-CH 100V 16A 8-Pin TDSON T/R
***ronik
N-CH 100V 61mOhm 16A SON-8
***i-Key
MOSFET 2N-CH 8TDSON
***ark
Mosfet, Aec-Q101, N-Ch, 100V, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 100V, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:29W; Transistor Case Style:TDSON; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 100V, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:16A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.053ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:29W; Modello Case Transistor:TDSON; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: Dual N-channel Normal Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated leadframes | Target Applications: Direct Fuel Injection; Solenoid control; LED and Body lighting
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Part # Mfg. Description Stock Price
IPG16N10S461ATMA1
DISTI # V72:2272_06390876
Infineon Technologies AGTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4848
  • 3000:$0.3205
  • 1000:$0.3397
  • 500:$0.3774
  • 250:$0.4194
  • 100:$0.4660
  • 25:$0.6670
  • 10:$0.8153
  • 1:$0.9674
IPG16N10S461ATMA1
DISTI # V36:1790_06390876
Infineon Technologies AGTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.3008
  • 2500000:$0.3010
  • 500000:$0.3150
  • 50000:$0.3379
  • 5000:$0.3416
IPG16N10S461ATMA1
DISTI # IPG16N10S461ATMA1CT-ND
Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3011In Stock
  • 1000:$0.4170
  • 500:$0.5213
  • 100:$0.6594
  • 10:$0.8600
  • 1:$0.9800
IPG16N10S461ATMA1
DISTI # IPG16N10S461ATMA1DKR-ND
Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3011In Stock
  • 1000:$0.4170
  • 500:$0.5213
  • 100:$0.6594
  • 10:$0.8600
  • 1:$0.9800
IPG16N10S461ATMA1
DISTI # IPG16N10S461ATMA1TR-ND
Infineon Technologies AGMOSFET 2N-CH 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 25000:$0.3205
  • 10000:$0.3290
  • 5000:$0.3416
IPG16N10S461ATMA1
DISTI # 19735361
Infineon Technologies AGTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.3287
IPG16N10S461ATMA1
DISTI # 31970299
Infineon Technologies AGTrans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4848
  • 21:$0.9674
IPG16N10S461ATMA1
DISTI # IPG16N10S461ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 16A 8-Pin TDSON T/R - Bulk (Alt: IPG16N10S461ATMA1)
RoHS: Compliant
Min Qty: 1191
Container: Bulk
Americas - 0
  • 11910:$0.2659
  • 5955:$0.2709
  • 3573:$0.2809
  • 2382:$0.2909
  • 1191:$0.3019
IPG16N10S461ATMA1
DISTI # IPG16N10S461ATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 16A 8-Pin TDSON T/R - Tape and Reel (Alt: IPG16N10S461ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.3279
  • 30000:$0.3339
  • 20000:$0.3449
  • 10000:$0.3579
  • 5000:$0.3719
IPG16N10S461ATMA1
DISTI # SP000892972
Infineon Technologies AGTrans MOSFET N-CH 100V 16A 8-Pin TDSON T/R (Alt: SP000892972)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.3129
  • 30000:€0.3369
  • 20000:€0.3649
  • 10000:€0.3989
  • 5000:€0.4869
IPG16N10S461ATMA1
DISTI # 34AC1694
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes3006
  • 1000:$0.3900
  • 500:$0.4220
  • 250:$0.4550
  • 100:$0.4870
  • 50:$0.5760
  • 25:$0.6660
  • 10:$0.7550
  • 1:$0.8990
IPG16N10S4-61
DISTI # 726-IPG16N10S4-61
Infineon Technologies AGMOSFET MOSFET
RoHS: Compliant
4631
  • 1:$0.8900
  • 10:$0.7480
  • 100:$0.4820
  • 1000:$0.3860
  • 5000:$0.3260
  • 10000:$0.3140
  • 25000:$0.3020
IPG16N10S461ATMA1
DISTI # 726-IPG16N10S461ATMA
Infineon Technologies AGMOSFET MOSFET
RoHS: Compliant
2764
  • 1:$0.8900
  • 10:$0.7480
  • 100:$0.4820
  • 1000:$0.3860
  • 5000:$0.3260
  • 10000:$0.3140
  • 25000:$0.3020
IPG16N10S461ATMA1Infineon Technologies AGPower Field-Effect Transistor, 16A I(D), 100V, 0.061ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
33459
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
IPG16N10S461ATMA1
DISTI # 2781090
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TDSON2521
  • 500:£0.3190
  • 250:£0.3430
  • 100:£0.3680
  • 10:£0.6240
  • 1:£0.7760
IPG16N10S461ATMA1
DISTI # 2781090
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, TDSON
RoHS: Compliant
3006
  • 5000:$0.4750
  • 1000:$0.5000
  • 500:$0.5300
  • 250:$0.6120
  • 100:$0.7240
  • 25:$0.8880
  • 5:$1.0200
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IPG16N10S461ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.84
$0.84
10
$0.72
$7.22
100
$0.56
$55.50
500
$0.49
$245.00
1000
$0.39
$387.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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