IRF5803D2PBF

IRF5803D2PBF
Mfr. #:
IRF5803D2PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
Lifecycle:
New from this manufacturer.
Datasheet:
IRF5803D2PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF5803D2PBF DatasheetIRF5803D2PBF Datasheet (P4-P6)IRF5803D2PBF Datasheet (P7-P9)IRF5803D2PBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
40 V
Id - Continuous Drain Current:
3.4 A
Rds On - Drain-Source Resistance:
190 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 P-Channel
Type:
FETKY MOSFET & Schottky Diode
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
50 ns
Product Type:
MOSFET
Rise Time:
550 ns
Factory Pack Quantity:
95
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
88 ns
Typical Turn-On Delay Time:
43 ns
Part # Aliases:
SP001554058
Unit Weight:
0.019048 oz
Tags
IRF5803D2, IRF5803D, IRF5803, IRF580, IRF58, IRF5, IRF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
-40V FETKY - MOSFET and Schottky Diode in a SO-8 package
***et
Trans MOSFET P-CH 40V 3.4A 8-Pin SOIC
***ark
MOSFET With Schottky Diode; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-40V; Continuous Drain Current, Id:-3.4A; On Resistance, Rds(on):112mohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IRF5803D2PBF
DISTI # IRF5803D2PBF-ND
Infineon Technologies AGMOSFET P-CH 40V 3.4A 8-SOIC
RoHS: Compliant
Min Qty: 1330
Container: Tube
Limited Supply - Call
    IRF5803D2PBF
    DISTI # 70016968
    Infineon Technologies AGMOSFET,-40V FETKY - MOSFET AND Schottky Diode IN A SO-8 Package
    RoHS: Compliant
    0
    • 1:$0.4000
    IRF5803D2PBF
    DISTI # 942-IRF5803D2PBF
    Infineon Technologies AGMOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
    RoHS: Compliant
    0
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      Availability
      Stock:
      Available
      On Order:
      5000
      Enter Quantity:
      Current price of IRF5803D2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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