IXTA76P10T

Mfr. #:: IXTA76P10T
Manufacturer:: IXYS
Description:: Darlington Transistors MOSFET -76 Amps -100V 0.024 Rds
Lifecycle:: New from this manufacturer.
Datasheet:: IXTA76P10T Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IXTA76P10T Datasheet IXTA76P10T Datasheet (P4-P6)IXTA76P10T Datasheet (P7)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: IXYS

Product Category: FETs - Single

Series: TrenchP

Packaging: Tube

Unit-Weight: 0.056438 oz

Mounting-Style: SMD/SMT

Tradename: TrenchP

Package-Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Supplier-Device-Package: TO-263 (IXTA)

FET-Type: MOSFET P-Channel, Metal Oxide

Power-Max: 298W

Drain-to-Source-Voltage-Vdss: 100V

Input-Capacitance-Ciss-Vds: 13700pF @ 25V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 76A (Tc)

Rds-On-Max-Id-Vgs: 25 mOhm @ 500mA, 10V

Vgs-th-Max-Id: 4V @ 250μA

Gate-Charge-Qg-Vgs: 197nC @ 10V

Pd-Power-Dissipation: 298 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 20 ns

Rise-Time: 40 ns

Vgs-Gate-Source-Voltage: 15 V

Id-Continuous-Drain-Current: - 76 A

Vds-Drain-Source-Breakdown-Voltage: - 100 V

Vgs-th-Gate-Source-Threshold-Voltage: - 4 V

Rds-On-Drain-Source-Resistance: 25 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 52 ns

Typical-Turn-On-Delay-Time: 25 ns

Qg-Gate-Charge: 197 nC

Forward-Transconductance-Min: 35 S

Channel-Mode: Enhancement

Tags: IXTA76P, IXTA76, IXTA7, IXTA, IXT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
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IXTA76P10T Description

***ure Electronics: P-Channel 100 V 298 W 197 nC TrenchP Power Mosfet Surface Mount - TO-263AA

***ark: Mosfet, P-Ch, 100V, 76A, To-263Aa Rohs Compliant: Yes

***roFlash: Power Field-Effect Transistor, 76A I(D), 100V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA

***emi: N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

***Yang: Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***nell: MOSFET, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 9mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W

***r Electronics: Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 245 / Power Dissipation (Pd) W = 310

***ark: Mosfet Transistor, N Channel, 75 A, 100 V, 7.2 Mohm, 10 V, 4 V

***ure Electronics: Single N-Channel 100 V 9 mOhm 83 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 97A D2PAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***(Formerly Allied Electronics): MOSFET; N Ch.; 100V; 97A; 9 MOHM; 83 NCQG; D2-PAK; Pb-Free

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 230 W

***el Electronic: Fixed LDO Voltage Regulator, 2.5V to 5.5V, 210mV Dropout, 3.3Vout, 1Aout, TSSOP-16

***nell: MOSFET, N, 100V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi

*** Stop Electro: Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK Tube

***roFlash: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ment14 APAC: MOSFET, N CH, 100V, 59A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:59A; Power Dissipation Pd:160W; Voltage Vgs Max:20V

*** Source Electronics: Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK

***emi: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

***ure Electronics: N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

***ical: Trans MOSFET N-CH 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R

***(Formerly Allied Electronics): AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK

*** Electronic Components: IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms

***roFlash: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor,mosfet,n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes

***emi: N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ

***r Electronics: Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Market price

Part #	Mfg.	Description	Stock	Price
IXTA76P10T-TRL DISTI # V72:2272_07431623	IXYS Corporation	TRENCHP POWER MOSFET	1214	1000:$2.7460 500:$2.9220 250:$3.1340 100:$3.3180 25:$3.7010 10:$3.8740 1:$4.2460
IXTA76P10T DISTI # V36:1790_07433758	IXYS Corporation	Trans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA RoHS: Compliant	1027	2500:$2.1600 1000:$2.4790 500:$2.8750 250:$3.0299 100:$3.4730 50:$3.6160 25:$3.7170 10:$4.1760 1:$4.5940
IXTA76P10T DISTI # IXTA76P10T-ND	IXYS Corporation	MOSFET P-CH 100V 76A TO-263 RoHS: Compliant Min Qty: 1 Container: Tube	1043In Stock	1000:$2.6950 500:$3.1955 100:$3.9463 50:$4.3312 1:$5.3900
IXTA76P10T-TRL DISTI # 31232680	IXYS Corporation	TRENCHP POWER MOSFET	1214	1000:$2.7460 500:$2.9240 250:$3.1349 100:$3.3170 25:$3.7030 10:$3.8770 3:$4.2590
IXTA76P10T DISTI # 27146377	IXYS Corporation	Trans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA RoHS: Compliant	1027	1000:$2.4790 500:$2.8750 250:$3.0299 100:$3.4730 50:$3.6160 25:$3.7170 10:$4.1760 3:$4.5940
IXTA76P10T DISTI # 747-IXTA76P10T	IXYS Corporation	MOSFET -76 Amps -100V 0.024 Rds RoHS: Compliant	1140	1:$5.6300 10:$5.0300 25:$4.3800 50:$4.2900 100:$4.1300 250:$3.5200 500:$3.3400 1000:$2.8200 2500:$2.4200
IXTA76P10T-TRL DISTI # 747-IXTA76P10T-TRL	IXYS Corporation	MOSFET -76 Amps -100V 0.024 Rds RoHS: Compliant	0	800:$2.8200 2400:$2.4200
IXTA76P10T DISTI # C1S331700027386	IXYS Corporation	Trans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA RoHS: Compliant	1027	100:$3.4730 50:$3.6160 25:$3.7170 10:$4.1760 1:$4.5940
IXTA76P10T-TRL DISTI # C1S331700094661	IXYS Corporation	TRENCHP POWER MOSFET RoHS: Compliant	1214	250:$3.1349 100:$3.3170 25:$3.7030 10:$3.8770 1:$4.2590

Related products

Image	Part #	Description
	Mfr.#: IXTA70N075T2 OMO.#: OMO-IXTA70N075T2	MOSFET 70 Amps 75V 0.0120 Rds
	Mfr.#: IXTA72N20T OMO.#: OMO-IXTA72N20T	MOSFET 72 Amps 200V 33 Rds
	Mfr.#: IXTA76N25TTRL OMO.#: OMO-IXTA76N25TTRL-1190	New and Original
	Mfr.#: IXTA75N10P TRL OMO.#: OMO-IXTA75N10P-TRL-1190	IXTA75N10P TRL
	Mfr.#: IXTA76P10TTRL OMO.#: OMO-IXTA76P10TTRL-1190	New and Original
	Mfr.#: IXTA70N085T OMO.#: OMO-IXTA70N085T-IXYS-CORPORATION	MOSFET N-CH 85V 70A TO-263
	Mfr.#: IXTA74N15T OMO.#: OMO-IXTA74N15T-IXYS-CORPORATION	MOSFET N-CH 150V 74A TO-263
	Mfr.#: IXTA76N25T OMO.#: OMO-IXTA76N25T-IXYS-CORPORATION	IGBT Transistors MOSFET 76 Amps 250V 39 Rds
	Mfr.#: IXTA75N10P OMO.#: OMO-IXTA75N10P-IXYS-CORPORATION	MOSFET 75 Amps 100V 0.025 Rds
	Mfr.#: IXTA70N075T2 OMO.#: OMO-IXTA70N075T2-IXYS-CORPORATION	MOSFET 70 Amps 75V 0.0120 Rds

Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of IXTA76P10T is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$3.24~~; ~~$3.24~~

10: ~~$3.08~~; ~~$30.78~~

100: ~~$2.92~~; ~~$291.60~~

500: ~~$2.75~~; ~~$1 377.00~~

1000: ~~$2.59~~; ~~$2 592.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IXTA76P10T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes