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MRF6V2150NR1

MRF6V2150NR1
Mfr. #:
MRF6V2150NR1
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors VHV6 150W
Lifecycle:
New from this manufacturer.
Datasheet:
MRF6V2150NR1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
MRF6V2150NR1 more Information
Product Attribute
Attribute Value
Manufacturer:
NXP
Product Category:
RF MOSFET Transistors
RoHS:
E
Transistor Polarity:
N-Channel
Technology:
Si
Vds - Drain-Source Breakdown Voltage:
110 V
Gain:
25 dB
Output Power:
150 W
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
TO-270-4
Packaging:
Reel
Configuration:
Single Dual Drain Dual Gate
Height:
2.64 mm
Length:
17.58 mm
Operating Frequency:
220 MHz
Series:
MRF6V2150N
Type:
RF Power MOSFET
Width:
9.07 mm
Brand:
NXP / Freescale
Channel Mode:
Enhancement
Moisture Sensitive:
Yes
Product Type:
RF MOSFET Transistors
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Vgs - Gate-Source Voltage:
- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage:
1.62 V
Part # Aliases:
935316842528
Unit Weight:
0.058073 oz
Tags
MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***r
    G***r
    LV

    Packing is good. The parcel came very quickly

    2019-01-10
    C***t
    C***t
    TH

    Received. Thank you reseller.

    2019-06-22
***W
RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
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***nell
RF FET, 110V, 450MHZ-10MHZ, TO-272WB; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 10MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6V2150N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes
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***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes
***W
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*** Semiconductors SCT
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***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
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Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes
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IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
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***nsix Microsemi
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***hard Electronics
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***S.I.T. Europe - USA - Asia
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***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
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*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Part # Mfg. Description Stock Price
MRF6V2150NR1
DISTI # MRF6V2150NR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		884In Stock
  • 100:$52.5772
  • 10:$58.6290
  • 1:$62.4100
MRF6V2150NR1
DISTI # MRF6V2150NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO-270-4
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		500In Stock
  • 500:$48.8424
MRF6V2150NR1
DISTI # MRF6V2150NR1		Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin TO-270 WB EP T/R - Tape and Reel (Alt: MRF6V2150NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$53.4900
  • 1000:$51.3900
  • 2000:$49.3900
  • 3000:$47.5900
  • 5000:$46.6900
MRF6V2150NR1
DISTI # 47M2188		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$73.4500
MRF6V2150NR1
DISTI # 61AC0770		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:450MHz,Operating Frequency Max:10MHz,RF Transistor Case:TO-270WB,No. of RoHS Compliant: Yes386
  • 1:$60.5200
  • 10:$57.5000
  • 25:$55.0900
  • 50:$53.0700
  • 100:$51.0500
  • 250:$48.8500
MRF6V2150NR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
RoHS: Compliant		1
  • 1000:$48.3200
  • 500:$50.8600
  • 100:$52.9500
  • 25:$55.2200
  • 1:$59.4700
MRF6V2150NR1
DISTI # 841-MRF6V2150NR1		NXP SemiconductorsRF MOSFET Transistors VHV6 150W
RoHS: Compliant		102
  • 1:$60.5200
  • 5:$58.7600
  • 10:$57.5000
  • 25:$55.0900
  • 100:$51.0500
  • 250:$48.8500
  • 500:$47.3800
MRF6V2150NR1
DISTI # MRF6V2150NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$61.4000
  • 10:$56.7500
  • 25:$55.0900
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:$99.4800
  • 10:$93.4500
  • 100:$83.8100
MRF6V2150NR1
DISTI # 2890604		NXP SemiconductorsRF FET, 110V, 450MHZ-10MHZ, TO-272WB
RoHS: Compliant		386
  • 1:£45.7800
  • 5:£44.4600
  • 10:£41.6800
  • 50:£36.9500
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Availability
Stock:
437
On Order:
2420
Enter Quantity:
Current price of MRF6V2150NR1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$60.52
$60.52
5
$58.76
$293.80
10
$57.50
$575.00
25
$55.09
$1 377.25
100
$51.05
$5 105.00
250
$48.85
$12 212.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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