IGT60R190D1SATMA1

Mfr. #:: IGT60R190D1SATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET 600V CoolGaN Power Transistor
Lifecycle:: New from this manufacturer.
Datasheet:: IGT60R190D1SATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: IGT60R190D1SATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: GaN

Mounting Style:: SMD/SMT

Package / Case:: PG-HSOF-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 12.5 A

Rds On - Drain-Source Resistance:: 190 mOhms

Vgs th - Gate-Source Threshold Voltage:: 0.9 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 3.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 55.5 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolGaN

Packaging:: Reel

Transistor Type:: 1 N-Channel

Brand:: Infineon Technologies

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 2000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 12 ns

Typical Turn-On Delay Time:: 11 ns

Part # Aliases:: SP001701702

Tags: IGT60, IGT6, IGT

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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Step2:
Anti-Static Bag

Step3:
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IGT60R190D1SATMA1 More Information

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

CoolGaN™ Gallium Nitride HEMTs: Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.

Market price

Part #	Mfg.	Description	Stock	Price
IGT60R190D1SATMA1 DISTI # V72:2272_22710693	Infineon Technologies AG	IGT60R190D1SATMA1	4055	3000:$8.2850 1000:$8.6090 500:$8.9330 250:$9.2560 100:$10.1350 25:$11.4900 10:$11.8430 1:$13.0200
IGT60R190D1SATMA1 DISTI # V36:1790_22710693	Infineon Technologies AG	IGT60R190D1SATMA1	0	2000000:$7.2580 1000000:$7.2610 200000:$7.6100 20000:$8.2630 2000:$8.3740
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1CT-ND	Infineon Technologies AG	IC GAN FET 600V 23A 8HSOF RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	510In Stock	1000:$8.9618 500:$9.7704 100:$10.9832 10:$13.0050 1:$14.1500
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1DKR-ND	Infineon Technologies AG	IC GAN FET 600V 23A 8HSOF RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	510In Stock	1000:$8.9618 500:$9.7704 100:$10.9832 10:$13.0050 1:$14.1500
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1TR-ND	Infineon Technologies AG	IC GAN FET 600V 23A 8HSOF RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$8.3737
IGT60R190D1SATMA1 DISTI # 32361396	Infineon Technologies AG	IGT60R190D1SATMA1	4055	3000:$8.2850 1000:$8.6090 500:$8.9330 250:$9.2560 100:$10.1350 25:$11.4900 10:$11.8430 1:$13.0200
IGT60R190D1SATMA1 DISTI # SP001701702	Infineon Technologies AG	GAN HV (Alt: SP001701702) RoHS: Compliant Min Qty: 2000	Europe - 100	20000:€6.8900 12000:€7.3900 8000:€7.8900 4000:€8.2900 2000:€8.5900
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1	Infineon Technologies AG	GAN HV - Tape and Reel (Alt: IGT60R190D1SATMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$7.8900 12000:$7.9900 8000:$8.2900 4000:$8.5900 2000:$8.8900
IGT60R190D1SATMA1 DISTI # 84AC1772	Infineon Technologies AG	MOSFET, N-CH, 600V, 12.5A, 55.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:12.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes	2158	1000:$8.3700 500:$9.1300 250:$9.7600 100:$10.2600 50:$10.9500 25:$11.6500 10:$12.1500 1:$13.2100
IGT60R190D1SATMA1 DISTI # 726-IGT60R190D1SATMA	Infineon Technologies AG	MOSFET 600V CoolGaN Power Transistor RoHS: Compliant	2156	1:$13.0800 10:$12.0300 25:$11.5300 100:$10.1600 250:$9.6600 500:$9.0400 1000:$8.2900 2000:$7.4800
IGT60R190D1SATMA1 DISTI # IGT60R190D1SATMA1	Infineon Technologies AG	Transistor: N-JFET,CoolGaN™,unipolar,600V,12.5A,Idm:23A,55.5W	7	10:$12.2900 3:$13.8700 1:$15.4400
IGT60R190D1SATMA1 DISTI # 2981534	Infineon Technologies AG	MOSFET, N-CH, 600V, 12.5A, 55.5W	658	100:£7.3600 50:£7.8600 10:£8.3600 5:£9.4800 1:£9.9600
IGT60R190D1SATMA1 DISTI # 2981534	Infineon Technologies AG	MOSFET, N-CH, 600V, 12.5A, 55.5W RoHS: Compliant	658	250:$12.4700 100:$14.7600 50:$15.9000 10:$16.9800 5:$19.2200 1:$21.0400

Related products

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	Mfr.#: IGOT60R070D1AUMA1 OMO.#: OMO-IGOT60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
	Mfr.#: IGLD60R070D1AUMA1 OMO.#: OMO-IGLD60R070D1AUMA1	MOSFET 600V CoolGaN Power Transistor
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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IGT60R190D1SATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$13.08~~; ~~$13.08~~

10: ~~$12.03~~; ~~$120.30~~

25: ~~$11.53~~; ~~$288.25~~

100: ~~$10.16~~; ~~$1 016.00~~

250: ~~$9.66~~; ~~$2 415.00~~

500: ~~$9.04~~; ~~$4 520.00~~

1000: ~~$8.29~~; ~~$8 290.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes