BFP740FESDH6327XTSA1

Mfr. #:: BFP740FESDH6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors RF BI
Lifecycle:: New from this manufacturer.
Datasheet:: BFP740FESDH6327XTSA1 Datasheet
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More Information:: BFP740FESDH6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFP740

Technology:: Si

Package / Case:: TSFP-4

Packaging:: Reel

Brand:: Infineon Technologies

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 740FESD BFP BFP74FESDH6327XT H6327 SP000890036

Unit Weight:: 0.000063 oz

Tags: BFP740FESDH, BFP740FES, BFP740FE, BFP740F, BFP740, BFP74, BFP7, BFP

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP740FESDH6327XTSA1 Description

***ure Electronics: BFP740FESD Series NPN 4.7 V 45 mA SMT Low Noise Bipolar RF Transistor-TSFP-4

***ow.cn: Trans RF BJT NPN 4.2V 0.045A 160mW Automotive 4-Pin TSFP T/R

***icontronic: RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN

*** Source Electronics: Robust High Performance Low Noise Bipolar RF Transistor

***nell: RF TRANSISTOR, NPN, 4.2V, 47GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.2V; Transition Frequency ft: 47GHz; Power Dissipation Pd: 160mW; DC Collector Current: 45mA; DC Current Gain hFE: 160hFE; R

***ineon SCT: The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads, TSFP-4-1, RoHS

***ineon: The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP740FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V. | Summary of Features: Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology; 2 kV ESD robustness (HBM) due to integrated protection circuits; High maximum RF input power of 21 dBm; 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA; 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 20.5 dB at 5.5 GHz, 25 mA; 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA; Accurate SPICE GP model available to enable effective design in process (see chapter 6); Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier

***p One Stop Global: Trans RF BJT NPN 6V 0.05A 200mW 3-Pin SMT T/R

***SIT Distribution GmbH: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

***i-Key: RF TRANS NPN 6V 800MHZ SMT3

***i-Key: TRANS NPN 3.5V 35MA 3SSFP

***nell: TRANS, NPN, 3.5V, 0.035A, SSFP; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:3.5V; Typ Gain Bandwidth ft:21GHz; Power Dissipation Pd:120mW; DC Collector Current:35mA; DC Current Gain hFE:160; Transistor Case Style:SC-81; No. of Pins:3

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC114EKA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-59

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R

***ment14 APAC: Transistor, DIGITAL, SC-59, 100MA, NPN; Digital Transistor Polarity:Single Collector Emitter Voltage V(br)ceo:50V; Continuous Current

***ark: Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Base Emitter Resistor R2:10Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes

***nell: TRANSISTOR, DIGITAL, SC-59, 100MA, NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: DTC114E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SC-59; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 250MHz

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

***ure Electronics: DTA114EKA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-59

***ical: Trans Digital BJT PNP 50V 100mA 3-Pin SMT T/R

***ment14 APAC: Transistor; DIGITAL; PNP SC-59; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Current

***ark: Transistor, Rf, Pnp, -50V, 250Mhz, Sot-346-3; Transistor Polarity:single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes

***nell: TRANSISTOR; DIGITAL; PNP SC-59; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-346; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ure Electronics: DMC56404 Series 50 V 100 mA Surface Mount Dual NPN Transistor - SMini6-F3-B

***et: Trans Digital BJT NPN 50V 100mA 6-Pin SC-113DB Embossed T/R

***er Electronics: SC,COMPOSITE TRANSISTOR / PNP DUAL, FOR DIGITAL CIRCUITS, VCEO:50V, IC:100MA

***(Formerly Allied Electronics): DMC564040R,Dual NPN Digi Transistor,100mA 50V 10 kOhm,Ratio Of.21,6-Pin SMini6 | Panasonic Electronic Components DMC564040R

***ark: Digital Transistor Polarity:dual Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.21(Ratio); Product Range:-Rohs Compliant: Yes

BFP740FESDH6327XTSA1 More Information

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

Part #	Mfg.	Description	Stock	Price
BFP740FESDH6327XTSA1 DISTI # V72:2272_06384753	Infineon Technologies AG	Trans RF BJT NPN 4.2V 0.045A Automotive 4-Pin TSFP T/R RoHS: Compliant	2742	1000:$0.1744 500:$0.2169 250:$0.2239 100:$0.2245 25:$0.3253 10:$0.3269 1:$0.3779
BFP740FESDH6327XTSA1 DISTI # BFP740FESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 47GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9133In Stock	1000:$0.2017 500:$0.2611 100:$0.3322 10:$0.4450 1:$0.5200
BFP740FESDH6327XTSA1 DISTI # BFP740FESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 47GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9133In Stock	1000:$0.2017 500:$0.2611 100:$0.3322 10:$0.4450 1:$0.5200
BFP740FESDH6327XTSA1 DISTI # BFP740FESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 4.7V 47GHZ 4TSFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	30000:$0.1475 15000:$0.1555 6000:$0.1670 3000:$0.1786
BFP740FESDH6327XTSA1 DISTI # 26195574	Infineon Technologies AG	Trans RF BJT NPN 4.2V 0.045A Automotive 4-Pin TSFP T/R RoHS: Compliant	2742	1000:$0.1744 500:$0.2169 250:$0.2239 100:$0.2245 44:$0.3253
BFP740FESDH6327XTSA1 DISTI # BFP740FESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.2V 0.045A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP740FESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1649 6000:$0.1599 12000:$0.1539 18000:$0.1489 30000:$0.1459
BFP740FESDH6327XTSA1 DISTI # SP000890036	Infineon Technologies AG	Trans GP BJT NPN 4.2V 0.045A 4-Pin TSFP T/R (Alt: SP000890036) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2369 6000:€0.1939 12000:€0.1779 18000:€0.1639 30000:€0.1519
BFP740FESDH6327XTSA1 DISTI # 50Y1759	Infineon Technologies AG	Bipolar - RF Transistor, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, 160 RoHS Compliant: Yes	0
BFP740FESDH6327XTSA1. DISTI # 29AC2764	Infineon Technologies AG	RF BIP TRANSISTORS ROHS COMPLIANT: YES	0
BFP740FESDH6327XTSA1	Infineon Technologies AG	BFP740FESD Series NPN 4.7 V 45 mA SMT Low Noise Bipolar RF Transistor-TSFP-4 RoHS: Compliant	50Cut Tape/Mini-Reel	1:$0.2600 250:$0.2100 500:$0.2000 750:$0.1990 1500:$0.1880
BFP740FESDH6327XTSA1 DISTI # 726-BFP740FESDH6327X	Infineon Technologies AG	RF Bipolar Transistors RF BI RoHS: Compliant	8985	1:$0.5100 10:$0.4160 100:$0.2540 1000:$0.1960 3000:$0.1680 9000:$0.1560 24000:$0.1480 45000:$0.1440
BFP 740FESD H6327 DISTI # 726-BFP740FESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BI RoHS: Compliant	7671	1:$0.5100 10:$0.4160 100:$0.2540 1000:$0.1960 3000:$0.1680 9000:$0.1560 24000:$0.1480 45000:$0.1440
BFP740FESDH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN RoHS: Compliant	3000	1000:$0.1600 100:$0.1700 500:$0.1700 25:$0.1800 1:$0.1900
BFP740FESDH6327XTSA1	International Rectifier	RoHS: Not Compliant	3000	1000:$0.1600 100:$0.1700 500:$0.1700 25:$0.1800 1:$0.1900
BFP740FESDH6327XTSA1 DISTI # 2480674	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.2V, 47GHZ, TSFP RoHS: Compliant	0	1:$0.8080 10:$0.6590 100:$0.4030 1000:$0.3100 3000:$0.2660 9000:$0.2570
BFP740FESDH6327XTSA1 DISTI # 2480674RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.2V, 47GHZ, TSFP RoHS: Compliant	0	1:$0.8080 10:$0.6590 100:$0.4030 1000:$0.3100 3000:$0.2660 9000:$0.2570
BFP740FESDH6327XTSA1 DISTI # 2480674	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.2V, 47GHZ, TSFP RoHS: Compliant	8	5:£0.3570 25:£0.3220 100:£0.1920 250:£0.1700 500:£0.1490
BFP740FESDH6327XTSA1 DISTI # C1S322000647642	Infineon Technologies AG	Trans RF BJT NPN 4.2V 0.045A Automotive 4-Pin TSFP T/R RoHS: Compliant	2742	250:$0.2239 100:$0.2245 25:$0.3253 10:$0.3269

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BFP740FESDH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes