BSP315PH6327XTSA1

Mfr. #:: BSP315PH6327XTSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET P-Ch -60V -1.17A SOT-223-3
Lifecycle:: New from this manufacturer.
Datasheet:: BSP315PH6327XTSA1 Datasheet
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More Information:: BSP315PH6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-223-4

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 1.17 A

Rds On - Drain-Source Resistance:: 1.4 Ohms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 4.5 V

Qg - Gate Charge:: 5.2 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.8 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.6 mm

Length:: 6.5 mm

Series:: BSP315

Transistor Type:: 1 P-Channel

Width:: 3.5 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 0.7 S

Fall Time:: 19 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 32 ns

Typical Turn-On Delay Time:: 24 ns

Part # Aliases:: BSP315P H6327 SP001058830

Unit Weight:: 0.003951 oz

Tags: BSP315PH, BSP315P, BSP315, BSP31, BSP3, BSP

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BSP315PH6327XTSA1 Description

***p One Stop Global: Trans MOSFET P-CH 60V 1.17A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single P-Channel 60 V 0.8 Ohm 5.2 nC SIPMOS® Small Signal Mosfet - SOT-223

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt X7R 10% Soft Term

***ark: P CHANNEL MOSFET, -60V, 1.17A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.17 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 800 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

***nell: MOSFET, P, LOGIC, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.17A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 1.17A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 1.8W; Pulse Current Idm: 4.68A; SMD Marking: BSP315P; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: -60V; Voltage Vgs Max: -1.5V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Max: -2V

***ure Electronics: Single N-Channel 100 V 600 mOhm 4.5 nC OptiMOS Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 100V 1.2A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ark: MOSFET, N-CH, 100V, 1.2A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 5.2 / Rise Time ns = 3.8 / Turn-OFF Delay Time ns = 18.4 / Turn-ON Delay Time ns = 3.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 1.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

*** Stop Electro: Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ical: Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R

*** Electronics: SMALL-SIGNAL N-CHANNEL MOSFET

***el Nordic: Contact for details

***ure Electronics: Single N-Channel 240 V 6 Ohm 4.3 nC SIPMOS® Small Signal Mosfet - SOT-223

***ow.cn: Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ark: MOSFET, N, LOGIC, SOT-223; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:240V; Current, Id Cont:0.36A; Resistance, Rds On:6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.4V; Case Style:SOT-223; ;RoHS Compliant: Yes

***trelec: MOSFET Operating temperature: -55...150 °C Drive: logic level Housing type: SOT-223 Polarity: N Variants: Enhancement mode Power dissipation: 1.7 W

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***(Formerly Allied Electronics): IRFL9110TRPBF P-channel MOSFET Transistor; 0.69 A; 100 V; 3 + Tab-Pin SOT-223

***ure Electronics: Single P-Channel 100 V 1.2 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Stop Electro: Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***(Formerly Allied Electronics): IRFL9110PBF P-channel MOSFET Transistor; 1.1 A; 100 V; 3 + Tab-Pin SOT-223

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Power dissipation: 2 W

***ical: Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223

***ment14 APAC: MOSFET, P, -100V, -1.1A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Source Voltage Vds:-100V; On Resistance

***roFlash: Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***nell: MOSFET, P, -100V, -1.1A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: -1.1A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 8.8A; SMD Marking: FL9110; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: -100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: -10V; Voltage Vgs th Max: -4V

***ical: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R

***inecomponents.com: N-CH/LL/100V/1.5A/0.4OHM@VGS=5V/Substitute of IRFM110TF

***ser: MOSFETs 100V N-Channel a-FET Logic Level

***S: French Electronic Distributor since 1988

***ment14 APAC: N CH MOSFET, 100V, 1.5A, SOT-223; Transi; N CH MOSFET, 100V, 1.5A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):440mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V

***ical: Trans MOSFET N-CH Si 150V 1.2A 4-Pin(3+Tab) SOT-223 T/R

***emi: N-Channel PowerTrench® MOSFET 150V, 1.2A, 845mΩ

***ure Electronics: N Channel 150 V 1.2 A 845 mohm Surface Mount Power Trench Mosfet - SOT-223-4

***nell: MOSFET, N-CH, 150V, 3A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.695ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Pow

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

***(Formerly Allied Electronics): IRFL110PBF N-channel MOSFET Transistor, 1.5 A, 100 V, 4-Pin SOT-223

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 100V 1.5A 4-Pin (3+Tab) SOT-223

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:1.5A; On Resistance, Rds(on):540mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SOT-223 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 100V, 1.5A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; Package / Case:SOT-223; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Pulse Current Idm:12A; SMD Marking:FL110; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 100V 1.5A 4-Pin (3+Tab) SOT-223

***ment14 APAC: MOSFET, N, 100V, 1.5A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:60°C/W; Package / Case:SOT-223; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Pulse Current Idm:12A; SMD Marking:LL110; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

BSP315PH6327XTSA1 More Information

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSP315PH6327XTSA1 DISTI # V72:2272_06392017	Infineon Technologies AG	Trans MOSFET P-CH 60V 1.17A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	0
BSP315PH6327XTSA1 DISTI # V36:1790_06392017	Infineon Technologies AG	Trans MOSFET P-CH 60V 1.17A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	0	1000000:$0.2184 500000:$0.2186 100000:$0.2329 10000:$0.2562 1000:$0.2600
BSP315PH6327XTSA1 DISTI # BSP315PH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1065In Stock	500:$0.4056 100:$0.5130 10:$0.6690 1:$0.7600
BSP315PH6327XTSA1 DISTI # BSP315PH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1065In Stock	500:$0.4056 100:$0.5130 10:$0.6690 1:$0.7600
BSP315PH6327XTSA1 DISTI # BSP315PH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 1.17A SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	25000:$0.2494 10000:$0.2559 5000:$0.2658 2000:$0.2855 1000:$0.3150
BSP315PH6327XTSA1 DISTI # SP001058830	Infineon Technologies AG	Trans MOSFET P-CH -60V -1.17A 4-Pin SOT-223 T/R (Alt: SP001058830) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 28500	10000:€0.2029 6000:€0.2179 4000:€0.2429 2000:€0.2729 1000:€0.3219
BSP315PH6327XTSA1 DISTI # BSP315PH6327XTSA1	Infineon Technologies AG	Trans MOSFET P-CH -60V -1.17A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP315PH6327XTSA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.1899 10000:$0.1939 6000:$0.1999 4000:$0.2079 2000:$0.2159
BSP315PH6327XTSA1 DISTI # BSP315P H6327	Infineon Technologies AG	Trans MOSFET P-CH -60V -1.17A 4-Pin SOT-223 T/R (Alt: BSP315P H6327) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$0.2333 25000:$0.2363 10000:$0.2394 5000:$0.2425 3000:$0.2490 2000:$0.2560 1000:$0.2633
BSP315PH6327XTSA1 DISTI # 68AC4419	Infineon Technologies AG	MOSFET, P-CH, -60V, -1.17A, SOT-223-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.17A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.5ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes	0	100:$0.3790 50:$0.4480 25:$0.5180 10:$0.5880 1:$0.7070
BSP315P H6327 DISTI # 726-BSP315PH6327	Infineon Technologies AG	MOSFET P-Ch -60V -1.17A SOT-223-3 RoHS: Compliant	18327	1:$0.7000 10:$0.5820 100:$0.3750 1000:$0.3000
BSP315PH6327XTSA1 DISTI # 726-BSP315PH6327XTSA	Infineon Technologies AG	MOSFET P-Ch -60V -1.17A SOT-223-3 RoHS: Compliant	5854	1:$0.7000 10:$0.5820 100:$0.3750 1000:$0.3000
BSP315PH6327XTSA1 DISTI # 8269238	Infineon Technologies AG	MOSFET P-CH 1.17A 60V SIPMOS SOT223, PK	950	1000:£0.2170 750:£0.2530 500:£0.2620 250:£0.2710 50:£0.4500
BSP315PH6327XTSA1 DISTI # 8269238P	Infineon Technologies AG	MOSFET P-CH 1.17A 60V SIPMOS SOT223, RL	7300	1000:£0.2170 750:£0.2530 500:£0.2620 250:£0.2710
BSP315PH6327XTSA1 DISTI # BSP315PH6327XTSA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-1.17A,1.8W,PG-SOT223	469	100:$0.2300 30:$0.2600 10:$0.2900 3:$0.3300
BSP315PH6327XTSA1 DISTI # BSP315P	Infineon Technologies AG	P-LogL 60V 1,17A 1,8W 0,8R SOT223 RoHS: Compliant	2325	25:€0.3710 200:€0.2710 500:€0.2210 1000:€0.2030
BSP315PH6327XTSA1 DISTI # XSKDRABV0047528	Infineon Technologies AG	ZenerDiode,43VV(Z),5%,0.5W,Silicon,Unidirectional,DO-35 RoHS: Compliant	10500 in Stock0 on Order	10500:$0.2587 3000:$0.2771
BSP315PH6327XTSA1 DISTI # 2480636	Infineon Technologies AG	MOSFET, P-CH, -60V, -1.17A, SOT-223-4	5811	500:£0.2530 250:£0.2730 100:£0.2920 10:£0.5010 1:£0.6230
BSP315PH6327XTSA1 DISTI # 2480636	Infineon Technologies AG	MOSFET, P-CH, -60V, -1.17A, SOT-223-4 RoHS: Compliant	996	1000:$0.4620 100:$0.5770 10:$0.8950 1:$1.0800

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BSP315PH6327XTSA1

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Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes