BSC090N03MSGATMA1

Mfr. #:: BSC090N03MSGATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
Lifecycle:: New from this manufacturer.
Datasheet:: BSC090N03MSGATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 48 A

Rds On - Drain-Source Resistance:: 7.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 24 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 32 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3M

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 28 S

Fall Time:: 5.4 ns

Product Type:: MOSFET

Rise Time:: 5 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 8.8 ns

Typical Turn-On Delay Time:: 9 ns

Part # Aliases:: BSC090N03MS BSC9N3MSGXT G SP000313120

Tags: BSC090N03MSGA, BSC090N03MSG, BSC090N03M, BSC090N, BSC090, BSC09, BSC0, BSC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC090N03MSGATMA1 Description

***ure Electronics: Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 48A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:48A; Power Dissipation Pd:32W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

Part #	Mfg.	Description	Stock	Price
BSC090N03MSGATMA1 DISTI # V72:2272_06390969	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.2158 1000:$0.2398 500:$0.2885 250:$0.2917 100:$0.2949 25:$0.4125 10:$0.4175 1:$0.4797
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8314In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.2692
BSC090N03MSGATMA1 DISTI # 26195690	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.2158 1000:$0.2398 500:$0.2885 250:$0.2917 100:$0.2949 35:$0.4125
BSC090N03MSGATMA1 DISTI # 27490114	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	50000:$0.2274 20000:$0.2284 10000:$0.2293 5000:$0.2303
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC090N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	5000:$0.2399 10000:$0.2389 20000:$0.2379 30000:$0.2379 50000:$0.2369
BSC090N03MSGATMA1. DISTI # 31AC8220	Infineon Technologies AG	TRANSITIONAL MOSFETS	0	1:$0.2400 10000:$0.2390 20000:$0.2380 50000:$0.2370
BSC090N03MS G DISTI # 726-BSC090N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant	9339	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC090N03MSGATMA1 DISTI # 726-BSC090N03MSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant	3552	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910 5000:$0.2450
BSC090N03MSGXT DISTI # 726-BSC090N03MSGXT	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M	0	5000:$0.2450
BSC090N03MSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	15000	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
BSC090N03MSGATMA1	Infineon Technologies AG	Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	200Cut Tape/Mini-Reel	1:$0.3650 100:$0.3150 250:$0.3050 500:$0.3000 1500:$0.2800
BSC090N03MSGATMA1 DISTI # 9062940P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TDSON8, RL	3275	125:£0.3020 500:£0.2720 1250:£0.2420
BSC090N03MSGATMA1 DISTI # 9062940	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TDSON8, PK	825	25:£0.4010 125:£0.3020 500:£0.2720 1250:£0.2420
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,43A,32W,PG-TDSON-8	4993	1:$0.5464 5:$0.4053 25:$0.3202 100:$0.2835 500:$0.2640
BSC090N03MSGATMA1 DISTI # C1S322000606326	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	250:$0.2659 100:$0.2954 25:$0.4133 10:$0.4207
BSC090N03MSGATMA1 DISTI # C1S322000241749	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.2540

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Availability

Stock:: Available
On Order:: 1986
Enter Quantity:

Current price of BSC090N03MSGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.67~~; ~~$0.67~~

10: ~~$0.56~~; ~~$5.62~~

100: ~~$0.36~~; ~~$36.30~~

1000: ~~$0.29~~; ~~$291.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BSC090N03MSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes