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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| BUZ111S | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 3249 |
|
| BUZ111SL-E3045A | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
| BUZ111SLE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
| BUZ111S | Infineon Technologies AG | 8800 | ||
| BUZ111SL | Siemens | MOSFET Transistor, N-Channel, TO-220AB | 90 | |
| BUZ111 | Fairchild Semiconductor Corporation | RoHS: Compliant | 1249 | |
| BUZ111SE3045A | Siemens | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 215 | |
| BUZ111S | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 4 | |
| BUZ111SE3045 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: BUZ100SLE3045A OMO.#: OMO-BUZ100SLE3045A-1190 |
New and Original |
|
|
Mfr.#: BUZ215 OMO.#: OMO-BUZ215-1190 |
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: BUZ351 OMO.#: OMO-BUZ351-1190 |
New and Original |
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Mfr.#: BUZ357 OMO.#: OMO-BUZ357-1190 |
Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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Mfr.#: BUZ380 OMO.#: OMO-BUZ380-1190 |
New and Original |
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Mfr.#: BUZ54 OMO.#: OMO-BUZ54-1190 |
New and Original |
|
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Mfr.#: BUZ71F OMO.#: OMO-BUZ71F-1190 |
New and Original |
|
Mfr.#: BUZ73 |
MOSFET N-CH 200V 7A TO-220AB |
|
|
Mfr.#: BUZ80 OMO.#: OMO-BUZ80-1190 |
MOSFET Transistor, N-Channel, TO-220AB |
|
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Mfr.#: BUZ32 H |
IGBT Transistors MOSFET N-Ch 200V 9.5A TO220-3 |