BFR 182 E6327

Mfr. #:: BFR 182 E6327
Manufacturer:: Infineon Technologies
Description:: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Lifecycle:: New from this manufacturer.
Datasheet:: BFR 182 E6327 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: BFR 182 E6327 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: RF Bipolar Transistors

RoHS:: Y

Series:: BFR182

Transistor Type:: Bipolar

Technology:: Si

Transistor Polarity:: NPN

DC Collector/Base Gain hfe Min:: 70

Collector- Emitter Voltage VCEO Max:: 12 V

Emitter- Base Voltage VEBO:: 2 V

Continuous Collector Current:: 0.035 A

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Configuration:: Single

Mounting Style:: SMD/SMT

Package / Case:: SOT-23

Packaging:: Reel

Collector- Base Voltage VCBO:: 20 V

DC Current Gain hFE Max:: 70 at 10 mA at 8 V

Height:: 1 mm

Length:: 2.9 mm

Operating Frequency:: 8000 MHz

Type:: RF Bipolar Small Signal

Width:: 1.3 mm

Brand:: Infineon Technologies

Gain Bandwidth Product fT:: 8000 MHz

Maximum DC Collector Current:: 0.035 A

Pd - Power Dissipation:: 250 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: BFR182E6327HTSA1 BFR182E6327XT SP000011051

Unit Weight:: 0.000282 oz

Tags: BFR182E63, BFR182E6, BFR182E, BFR182, BFR18, BFR1, BFR

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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BFR 182 E6327 More Information

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Market price

Part #	Mfg.	Description	Stock	Price
BFR182E6327HTSA1 DISTI # BFR182E6327HTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10340In Stock	1000:$0.1191 500:$0.1548 100:$0.2262 10:$0.3630 1:$0.4800
BFR182E6327HTSA1 DISTI # BFR182E6327HTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10340In Stock	1000:$0.1191 500:$0.1548 100:$0.2262 10:$0.3630 1:$0.4800
BFR182E6327HTSA1 DISTI # BFR182E6327HTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	75000:$0.0751 30000:$0.0838 15000:$0.0896 6000:$0.0983 3000:$0.1040
BFR 182 E6327 DISTI # SP000011051	Infineon Technologies AG	Trans GP BJT NPN 12V 0.035A 3-Pin SOT-23 T/R (Alt: SP000011051) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 2986	3000:€0.0839 6000:€0.0799 12000:€0.0769 18000:€0.0739 30000:€0.0709
BFR 182 E6327 DISTI # BFR 182 E6327	Infineon Technologies AG	Trans GP BJT NPN 12V 0.035A 3-Pin SOT-23 T/R (Alt: BFR 182 E6327) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0	9000:$0.0826 18000:$0.0803 27000:$0.0781 45000:$0.0761 90000:$0.0751 225000:$0.0741 450000:$0.0732
BFR182E6327XT DISTI # BFR182E6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 12V 0.035A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR182E6327HTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0829 15000:$0.0799 24000:$0.0769 45000:$0.0739 90000:$0.0729
BFR 182 E6327 DISTI # SP000011051	Infineon Technologies AG	Trans GP BJT NPN 12V 0.035A 3-Pin SOT-23 T/R (Alt: SP000011051) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0839 6000:€0.0799 12000:€0.0769 18000:€0.0739 30000:€0.0709
BFR182E6327HTSA1 DISTI # 01AC4782	Infineon Technologies AG	RF BIP TRANSISTORS,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:250mW,DC Collector Current:35mA,DC Current Gain hFE:100hFE,RF Transistor Case:SOT-23,No. of RoHS Compliant: Yes	3091	1000:$0.1160 500:$0.1280 250:$0.1390 100:$0.1510 50:$0.2100 25:$0.2690 10:$0.3280 1:$0.4700
BFR182E6327HTSA1. DISTI # 27AC0922	Infineon Technologies AG	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:250mW,DC Collector Current:35mA,DC Current Gain hFE:100hFE,RF Transistor Case:SOT-23,No. of Pins:3Pins RoHS Compliant: Yes	0	90000:$0.0730 45000:$0.0740 24000:$0.0770 15000:$0.0800 1:$0.0830
BFR182E6327	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS: Compliant	79170	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
BFR182E6327HTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS: Compliant	44500	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
BFR182E-6327	Infineon Technologies AG	RoHS: Not Compliant	89000	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
BFR 182 E6327 DISTI # 726-BFR182E6327	Infineon Technologies AG	RF Bipolar Transistors NPN Silicon RF TRANSISTOR RoHS: Compliant	4611	1:$0.4700 10:$0.3280 100:$0.1510 1000:$0.1160 3000:$0.0990 9000:$0.0900 24000:$0.0840
BFR182E6327HTSA1 DISTI # 726-BFR182E6327HTSA1	Infineon Technologies AG	RF Bipolar Transistors NPN Silicon RF TRANSISTOR RoHS: Compliant	5557	1:$0.4700 10:$0.3280 100:$0.1510 1000:$0.1160 3000:$0.0990 9000:$0.0900 24000:$0.0840
BFR182E6327HTSA1 DISTI # 8922264P	Infineon Technologies AG	RF TRANSISTOR BJT NPN 12V 0.035A SOT23, RL	2950	500:£0.1100 2500:£0.0870 5000:£0.0740 12500:£0.0680
BFR182E6327HTSA1 DISTI # 2443524	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	3155	500:£0.0990 250:£0.1040 100:£0.1070 25:£0.2380 5:£0.2850
BFR182E6327HTSA1 DISTI # 2443524	Infineon Technologies AG	RF BIP TRANSISTORS RoHS: Compliant	3181	5000:$0.1340 1000:$0.1550 500:$0.1770 250:$0.1970 100:$0.2040 25:$0.4340 5:$0.5130

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Availability

Stock:: Available
On Order:: 1992
Enter Quantity:

Current price of BFR 182 E6327 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.46~~; ~~$0.46~~

10: ~~$0.33~~; ~~$3.28~~

100: ~~$0.15~~; ~~$15.10~~

1000: ~~$0.12~~; ~~$116.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

BFR182E63 6
BFR182E6 7
BFR182E 9
BFR182 25
BFR18 85
BFR1 161
BFR 652

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BFR 182 E6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes