2DB1713-13 vs 2DB1713 vs 2DB1714

 
PartNumber2DB1713-132DB17132DB1714
DescriptionBipolar Transistors - BJT LO VSAT PNP SMT 2.5K
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-89-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 15 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 250 mV-- 370 mV
Maximum DC Collector Current- 6 A-- 4 A
Gain Bandwidth Product fT180 MHz-200 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Series2DB17-2DB17
DC Current Gain hFE Max270-270
Height1.5 mm--
Length4.5 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width2.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min270 at 500 mA, 2 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz-0.001834 oz
Package Case--TO-243AA
Mounting Type--Surface Mount
Supplier Device Package--SOT-89-3
Power Max--900mW
Transistor Type--PNP
Current Collector Ic Max--2A
Voltage Collector Emitter Breakdown Max--30V
DC Current Gain hFE Min Ic Vce--270 @ 200mA, 2V
Vce Saturation Max Ib Ic--370mV @ 75mA, 1.5A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--200MHz
Pd Power Dissipation--2000 mW
Collector Emitter Voltage VCEO Max--- 30 V
Collector Base Voltage VCBO--- 30 V
Emitter Base Voltage VEBO--- 6 V
DC Collector Base Gain hfe Min--270 at 200 mA 2 V
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