2DB1714-13 vs 2DB1714 vs 2DB1714-13DIODES

 
PartNumber2DB1714-132DB17142DB1714-13DIODES
DescriptionBipolar Transistors - BJT LO VSAT PNP SMT 2.5K
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 370 mV- 370 mV-
Maximum DC Collector Current- 4 A- 4 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2DB172DB17-
DC Current Gain hFE Max270270-
Height1.4 mm--
Length4.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
Power Max-900mW-
Transistor Type-PNP-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-30V-
DC Current Gain hFE Min Ic Vce-270 @ 200mA, 2V-
Vce Saturation Max Ib Ic-370mV @ 75mA, 1.5A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-200MHz-
Pd Power Dissipation-2000 mW-
Collector Emitter Voltage VCEO Max-- 30 V-
Collector Base Voltage VCBO-- 30 V-
Emitter Base Voltage VEBO-- 6 V-
DC Collector Base Gain hfe Min-270 at 200 mA 2 V-
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