2DD1766P-13 vs 2DD1766P vs 2DD1766P-7

 
PartNumber2DD1766P-132DD1766P2DD1766P-7
DescriptionBipolar Transistors - BJT 1000W 32Vceo
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max32 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage800 mV800 mV-
Maximum DC Collector Current2 A2 A-
Gain Bandwidth Product fT220 MHz220 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2DD172DD17-
DC Current Gain hFE Max180180-
Height1.5 mm--
Length4.5 mm--
PackagingReelReel-
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min82--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-SOT-89-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-32 V-
Collector Base Voltage VCBO-40 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-82-
Top