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| PartNumber | 2N1131 | 2N1131A | 2N1131AS |
| Description | Bipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNP | Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF | |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 35 V | 40 V | - |
| Collector Base Voltage VCBO | 50 V | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 50 MHz | 90 MHz | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Packaging | Bulk | Bulk | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| Continuous Collector Current | 0.6 A | 150 mA | - |
| DC Collector/Base Gain hfe Min | 15 at 5 mA, 10 V | 20 at 150 mA, 10 V | - |
| Pd Power Dissipation | 600 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N1131 PBFREE | 2N1131A PBFREE | - |
| Unit Weight | 0.035486 oz | - | - |
| Series | - | 2N657 | - |