2N1613 vs 2N1613A vs 2N1613(A B S)

 
PartNumber2N16132N1613A2N1613(A B S)
DescriptionBipolar Transistors - BJT NPN Gen Pur SSBipolar Transistors - BJT NPN Transistor
ManufacturerCentral SemiconductorMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-39-3-
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT60 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N1613--
DC Current Gain hFE Max120--
Height6.6 mm--
Length9.4 mm--
PackagingBulkFoil Bag-
Width9.4 mm--
BrandCentral SemiconductorMicrochip / Microsemi-
Continuous Collector Current500 mA--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5001-
SubcategoryTransistorsTransistors-
Part # Aliases2N1613 PBFREE--
Unit Weight0.035486 oz--
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