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| PartNumber | 2N2218 | 2N2218A | 2N2218A/TR |
| Description | Bipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 800mA 800mW | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | Central Semiconductor | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 30 V | 40 V | 50 V |
| Collector Base Voltage VCBO | 60 V | 75 V | 75 V |
| Emitter Base Voltage VEBO | 5 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 1.6 V | 1 V | 0.3 V |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - 55 C |
| Maximum Operating Temperature | + 200 C | + 150 C | + 200 C |
| Packaging | Bulk | Bulk | Reel |
| Brand | Central Semiconductor | Central Semiconductor | Microchip / Microsemi |
| Continuous Collector Current | 800 mA | - | - |
| DC Collector/Base Gain hfe Min | 20 at 150 mA, 1 V | 20 | 20 at 500 mA, 10 V |
| Pd Power Dissipation | 800 mW | 800 mW | 3 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 500 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N2218 PBFREE | 2N2218A PBFREE | - |
| Unit Weight | 0.035486 oz | 0.035486 oz | - |
| Maximum DC Collector Current | - | 0.8 A | 800 mA |
| Series | - | 2N2218 | - |
| Height | - | 6.6 mm | - |
| Length | - | 9.4 mm | - |
| Width | - | 9.4 mm | - |
| DC Current Gain hFE Max | - | - | 325 at 1 mA, 10 V |