2N2221A vs 2N2221 vs 2N2221ABS

 
PartNumber2N2221A2N22212N2221ABS
DescriptionBipolar Transistors - BJT NPN Gen Pur SSBipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 800mA 500mW
ManufacturerCentral SemiconductorCentral Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-18TO-18-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V30 V-
Collector Base Voltage VCBO75 V60 V-
Emitter Base Voltage VEBO6 V5 V-
Collector Emitter Saturation Voltage1 V1.6 V-
Maximum DC Collector Current0.8 A--
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 200 C-
Series2N2221--
DC Current Gain hFE Max120--
Height5.33 mm--
Length5.84 mm--
PackagingBulkBulk-
Width5.84 mm--
BrandCentral SemiconductorCentral Semiconductor-
DC Collector/Base Gain hfe Min4015 at 10 mA, 10 V-
Pd Power Dissipation400 mW500 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
Part # Aliases2N2221A PBFREE2N2221 PBFREE-
Unit Weight0.011020 oz--
Technology-Si-
Continuous Collector Current-800 mA-
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