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| PartNumber | 2N2369AU | 2N2369AU/TR | 2N2369AUA |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT Small-Signal BJT |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-18-3 | LCC-6 | - |
| Packaging | Bulk | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 15 V | - |
| Collector Base Voltage VCBO | - | 40 V | - |
| Emitter Base Voltage VEBO | - | 4.5 V | - |
| Collector Emitter Saturation Voltage | - | 0.2 V | - |
| Maximum DC Collector Current | - | 0.1 A | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 120 at 100 mA, 1 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 100 mA, 1 V | - |
| Pd Power Dissipation | - | 0.36 W | - |