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| PartNumber | 2N2904AL | 2N2904AL/TR | 2N2904ALEADFREE |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-5-3 | TO-5-3 | - |
| Packaging | Tray | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 60 V | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Emitter Base Voltage VEBO | - | 5 V | - |
| Collector Emitter Saturation Voltage | - | 0.4 V | - |
| Maximum DC Collector Current | - | 600 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 175 at 1 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 40 at 100 uA, 10 V | - |
| Pd Power Dissipation | - | 3 W | - |