2N2906A vs 2N2906A , SMBJ120A vs 2N2906A-O

 
PartNumber2N2906A2N2906A , SMBJ120A2N2906A-O
DescriptionBipolar Transistors - BJT PNP Gen Pur SSBipolar Transistors - BJT BIPOLAR SMALL SIGNAL
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-18--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage2.6 V--
Maximum DC Collector Current600 mA--
Gain Bandwidth Product fT200 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N2906--
PackagingBulk--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min40 at 150 mA, 10 V--
Pd Power Dissipation4000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Part # Aliases2N2906A PBFREE--
Unit Weight0.011020 oz--
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