2N3663 vs 2N3662 vs 2N3664

 
PartNumber2N36632N36622N3664
DescriptionRF Bipolar Transistors NPN RF 12V 50mA BULK
ManufacturerON Semiconductor--
Product CategoryRF Bipolar Transistors--
RoHSY--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min20--
Collector Emitter Voltage VCEO Max12 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current0.05 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleThrough Hole--
Package / CaseTO-92--
PackagingBulk--
Collector Base Voltage VCBO30 V--
DC Current Gain hFE Max20 at 8 mA at 10 V--
Height4.58 mm--
Length4.58 mm--
Operating Frequency2100 MHz--
TypeRF Bipolar Small Signal--
Width3.86 mm--
BrandON Semiconductor / Fairchild--
Gain Bandwidth Product fT2100 MHz--
Maximum DC Collector Current0.05 A--
Pd Power Dissipation350 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.006286 oz--
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