2N3711 vs 2N3710 vs 2N3713

 
PartNumber2N37112N37102N3713
DescriptionBipolar Transistors - BJT NPN Gen Pur SSBipolar Transistors - BJT NPN Gen Pur SSBipolar Transistors - BJT NPN GP Power
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYTY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-3-2
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V30 V60 V
Collector Base Voltage VCBO30 V30 V80 V
Emitter Base Voltage VEBO6 V6 V7 V
Collector Emitter Saturation Voltage1 V1 V1 V
Maximum DC Collector Current200 mA200 mA10 A
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Series2N37112N37102N3713
DC Current Gain hFE Max660330-
Height5.33 mm5.33 mm-
Length5.21 mm5.21 mm-
PackagingBulk-Tube
Width4.19 mm4.19 mm-
BrandCentral SemiconductorCentral SemiconductorCentral Semiconductor
DC Collector/Base Gain hfe Min1809040
Pd Power Dissipation625 mW625 mW150 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity250010020
SubcategoryTransistorsTransistorsTransistors
Part # Aliases2N3711 PBFREE-2N3713 PBFREE
Unit Weight0.016000 oz0.016000 oz0.225789 oz
Gain Bandwidth Product fT--4 MHz
Continuous Collector Current--10 A
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