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| PartNumber | 2N3810 | 2N3810A | 2N3810/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-78-6 | - | TO-78-6 |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Dual | - | Dual |
| Collector Emitter Voltage VCEO Max | 60 V | - | 60 V |
| Collector Base Voltage VCBO | 60 V | - | 60 V |
| Emitter Base Voltage VEBO | 5 V | - | 5 V |
| Collector Emitter Saturation Voltage | 200 mV | - | 0.2 V |
| Maximum DC Collector Current | 50 mA | - | 50 mA |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| DC Current Gain hFE Max | 450 at 100 uA, 5 VDC | - | 450 at 100 uA, 5 V |
| Packaging | Bulk | Bulk | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 150 at 100 uA, 5 VDC | - | 100 at 10 uA, 5 V |
| Pd Power Dissipation | 200 mW | - | 350 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |