PartNumber | 2N3868 | 2N3868S | 2N3868GJTX |
Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | |
Manufacturer | Microchip | Microchip | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | N | N | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-5-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 60 V | - | - |
Collector Base Voltage VCBO | 60 V | - | - |
Emitter Base Voltage VEBO | 4 V | - | - |
Collector Emitter Saturation Voltage | 500 mV | - | - |
Maximum DC Collector Current | 3 mA | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
DC Current Gain hFE Max | 150 at 1.5 A, 2 VDC | - | - |
Packaging | Bulk | Bulk | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
DC Collector/Base Gain hfe Min | 30 at 1.5 A, 2 VDC | - | - |
Pd Power Dissipation | 1 W | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | Transistors | Transistors | - |