2N4401 vs 2N4401 , MMBZ5246BLT1G vs 2N4401 (SIG)

 
PartNumber2N44012N4401 , MMBZ5246BLT1G2N4401 (SIG)
DescriptionBipolar Transistors - BJT NPN Gen Pur SSINSTOCK
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage750 mV--
Maximum DC Collector Current600 mA--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2N4401--
DC Current Gain hFE Max20--
Height5.33 mm--
Length5.21 mm--
PackagingBulk--
Width4.19 mm--
BrandCentral Semiconductor--
Continuous Collector Current0.6 A--
DC Collector/Base Gain hfe Min20 at 500 mA, 2 V--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # Aliases2N4401 PBFREE--
Unit Weight0.015873 oz--
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