2N4427 vs 2N4427 CS vs 2N4427A

 
PartNumber2N44272N4427 CS2N4427A
DescriptionBipolar Transistors - BJT NPN VHF/UHF AM
ManufacturerCentral Semiconductor-ST
Product CategoryBipolar Transistors - BJT-RF Transistors (BJT)
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-39-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO2 V--
Collector Emitter Saturation Voltage0.5 V-0.5V
Maximum DC Collector Current0.4 A-0.4 A
Gain Bandwidth Product fT500 MHz-500 MHz
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
Series2N4427-2N4427
Height6.6 mm--
Length9.4 mm--
PackagingBulk-Bulk
Width9.4 mm--
BrandCentral Semiconductor--
Continuous Collector Current400 mA-400 mA
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Part # Aliases2N4427 BK--
Unit Weight0.035486 oz--
Part Aliases--BK
Package Case--TO-205AD, TO-39-3 Metal Can
Mounting Type--Through Hole
Supplier Device Package--TO-39
Power Max--1W
Transistor Type--NPN
Current Collector Ic Max--400mA
Voltage Collector Emitter Breakdown Max--40V
DC Current Gain hFE Min Ic Vce--10 @ 100mA, 5V
Frequency Transition--500MHz
Noise Figure dB Typ f---
Gain--10dB @ 175MHz
Pd Power Dissipation--1 W
Collector Emitter Voltage VCEO Max--20 V
Collector Base Voltage VCBO--40 V
Emitter Base Voltage VEBO--2 V
DC Collector Base Gain hfe Min--10
Top