2N5302G vs 2N5302 vs 2N5302-HS

 
PartNumber2N5302G2N53022N5302-HS
DescriptionBipolar Transistors - BJT 30A 60V 200W NPNBipolar Transistors - BJT Power BJT
ManufacturerON SemiconductorMicrochip-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleThrough Hole--
Package / CaseTO-204-2--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Collector Emitter Saturation Voltage0.75 V--
Maximum DC Collector Current30 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N5302--
Height8.51 mm--
Length39.37 mm--
PackagingTrayTray-
Width26.67 mm--
BrandON SemiconductorMicrochip / Microsemi-
Continuous Collector Current30 A--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity1001-
SubcategoryTransistorsTransistors-
Unit Weight0.423993 oz--
Top